WSF25N20
N-Ch MOSFET
General Description
Product Summery
The WSF25N20 is the highest performance trench
N-Ch MOSFET with extreme high cell density,which
provide excellent RDSON and gate charge for most
of the synchronous buck converter applications .
BVDSS
RDSON
ID
200V
60mΩ
25A
Applications
The WSF25N20 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
TO-252 Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
±20
V
1
25
A
1
16
A
1
3.7
A
1
3.0
A
75
A
Single Pulse Avalanche Energy
35
mJ
IAS
Avalanche Current
6.5
A
PD@TC=25℃
Total Power Dissipation3
113
W
PD@Tc=100℃
Total Power Dissipation3
45
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-ambient
RθJC
1
www.winsok.tw
Thermal Resistance Junction-Case
Page 1
1
Max.
Unit
---
50
℃/W
---
1.1
℃/W
Rev 2: Apr.2019
WSF25N20
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
200
---
---
V
---
0.098
---
V/℃
---
60
75
mΩ
---
85
150
mΩ
2.0
3.0
4.0
V
---
-4.57
---
mV/℃
VDS=160V , VGS=0V , TJ=25℃
---
---
1
VDS=160V , VGS=0V , TJ=55℃
---
---
5
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=12A
VGS=6.0V , ID=10A
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±25V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=8A
---
20
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
---
40
---
---
14
---
Qg
Total Gate Charge (10V)
Qgs
Gate-Source Charge
Qgd
Td(on)
VDS=100V , VGS=10V , ID=12A
Gate-Drain Charge
---
10
---
Turn-On Delay Time
---
16
---
uA
nC
Rise Time
VDD=30V , VGS=10V , RG=6Ω,
---
7
---
Turn-Off Delay Time
ID=12A, RL=30Ω
---
37
---
Fall Time
---
15
---
Ciss
Input Capacitance
---
2350
---
Coss
Output Capacitance
---
155
---
Crss
Reverse Transfer Capacitance
---
45
---
Min.
Typ.
Max.
Unit
10
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
12
A
---
---
36
A
---
---
1.3
V
---
75
---
nS
---
250
---
nC
Tr
Td(off)
Tf
VDS=30V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.5mH , IAS=6.5A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
2,6
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Conditions
1,6
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=12A , TJ=25℃
IF=12A , dI/dt=100A/µs , TJ=25℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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