WSF09N20G

WSF09N20G N-Ch MOSFET General Description Product Summery The WSF09N20G is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF09N20G meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 200V 0.21Ω 9A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Rating Units Drain-Source Voltage 200 V Gate-Source Voltage ±20 V 1 9 A 1 3.13 A 1 9 A 1 5.8 A 36 A Single Pulse Avalanche Energy 320 mJ A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 IAS Avalanche Current 9 PD@TC=25℃ Total Power Dissipation3 83 W PD@Tc=100℃ Total Power Dissipation3 47 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 30 ℃/W --- 1.6 ℃/W Rev 4: Apr.2021 WSF09N20G N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 200 --- --- V --- 0.25 --- VGS=10V , ID=4.5A --- 0.21 0.25 V/℃ Ω VGS=6.0V , ID=3.6A --- 0.26 0.29 Ω 1.0 1.8 2.5 V --- -4.63 --- mV/℃ VDS=200V , VGS=0V , TJ=25℃ --- --- 1 VDS=160V , VGS=0V , TJ=125℃ --- --- 10 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=30V , ID=4.5A --- 0.21 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω --- 11.8 --- --- 2.36 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Td(on) VDS=160V , VGS=10V , ID=9A Gate-Drain Charge --- 3.98 --- Turn-On Delay Time --- 10.33 --- uA nC Rise Time VDD=100V , VGS=10V , --- 10.7 --- Turn-Off Delay Time RG=10Ω ID=9A RL=10Ω --- 29.1 --- Fall Time --- 11.1 --- Ciss Input Capacitance --- 509 --- Coss Output Capacitance --- 51.2 --- Crss Reverse Transfer Capacitance --- 3.2 --- Min. Typ. Max. Unit --- mJ Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=5A --- 320 Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Min. Typ. Max. Unit --- --- 9 A --- --- 36 A --- --- 1.4 V --- 201 --- nS --- 663 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t