WSG02N20

WSG02N20 N-Ch MOSFET General Description Product Summery The WSG02N20 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 200V 310mΩ 2A Applications The WSG02N20 meet the RoHS and Green Product requirement with full function reliability approved. Power Management in TV Inverter. SOT-223 Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage 200 V Gate-Source Voltage ±20 V 1 2.0 A 1 1.5 A 10 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 18 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 70 ℃/W --- 30 ℃/W Dec.2014 WSG02N20 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 200 --- --- V --- 0.098 --- V/℃ --- 310 410 mΩ --- 314 820 mΩ 2.0 2.8 4.0 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=2A VGS=6V , ID=1A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (10V) --- 51.7 --- Qgs Gate-Source Charge --- 12.7 --- --- 16.3 --50 Qgd VDS=30V , VGS=10V , ID=2A Gate-Drain Charge uA nC --- 32 Rise Time VDD=30V , VGEN=10V , --- 32.1 51 Turn-Off Delay Time RG=4.7Ω ID=1A ,RL=17.7Ω --- 60.9 79 Fall Time --- 5.2 10 Ciss Input Capacitance --- 645 --- Coss Output Capacitance --- 68 --- Crss Reverse Transfer Capacitance --- 21 --- Min. Typ. Max. --- --- 2 A --- --- 10 A --- --- 1.15 V --- 38 --- nS --- 56 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=2A,dI/dt=100A/µs , TJ=25℃ Unit Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSG02N20 N-Ch MOSFET Typical Characteristics 1000 15 VGS=10V VGS=7V 12 800 VGS=6V VGS=4.5V RDSON (mΩ) ID Drain Current (A) ID=2A 9 VGS=3.8V 6 600 400 3 250 0 0 0.5 1 1.5 2 2 2.5 6 VDS , Drain-to-Source Voltage (V) VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 10 ID=2A IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 0.2 2.0 1.5 1.0 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 TJ , Junction Temperature (℃) 150 Fig.6 Normalized RDSON vs. TJ Page 3 Dec.2014 WSG02N20 N-Ch MOSFET 10000 10.00 F=1.0MHz 100us 1ms 1000 1.00 10ms ID (A) Capacitance (pF) Ciss 100 o Crss TA=25 C Single Pulse 10 1 5 9 13 17 21 100ms 0.10 Coss 25 VDS , Drain to Source Voltage (V) 0.01 0.01 0.1 Fig.7 Capacitance DC 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.