WSG02P06

WSG02P06 P-Ch MOSFET General Description Product Summery This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package. BVDSS RDSON ID -60V 215mΩ -2A Applications z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch Features SOT-223 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V -2 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V -1.6 A IDM Pulsed Drain Current A PD@TA=25℃ Total Power Dissipation -10 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 62 ℃/W RθJC Thermal Resistance Junction-Case --- 5.4 ℃/W www.winsok.tw Page 1 Rev 1: Apr.2019 WSG02P06 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient Conditions Min. Typ. Max. Unit -60 --- --- V --- -0.03 --- V/℃ --- 175 215 --- 205 260 -1.2 -1.9 -3.0 V --- 4.56 --- mV/℃ VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 VDS=-60V , VGS=0V , TJ=55℃ --- --- -5 VGS=±20V , VDS=0V --- --- ±100 nA --- 5 --- S --- 6.3 --- --- 2.3 --- = VGS=0V , ID -250uA Reference to 25℃ , ID=-1mA = VGS=-10V , ID -2A = VGS=-4.5V , ID -2A VGS=VDS , ID =-250uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.8 --- Turn-On Delay Time --- 20 --- Td(on) Tr Td(off) = VDS=-15V , ID -2A VDS=-48V , VGS=-4.5V , ID=-1A Rise Time VDD=-30V , VGS=-10V , --- .3 --- Turn-Off Delay Time RGEN=3.3Ω,RL=30Ω. --- 5.2 --- Fall Time --- 3.8 --- Ciss Input Capacitance --- 364 --- Coss Output Capacitance --- 41 --- Crss Reverse Transfer Capacitance --- 12 --- Tf VDS=-15V , VGS=0V , f=1MHz mΩ uA nC ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current Diode Forward Voltage Min. Typ. Max. Unit VG=VD=0V , Force Current Conditions --- --- -2 A VGS=0V , IS=-1.2A , TJ=25℃ --- --- -1.2 V A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B: The power dissipation PD is based on TJ(MAX)=150℃, u s i n g ≤10s junction-to-ambient thermal resistance. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150℃. Ratings are based on low frequency and duty cycles to keep initial T J=25℃. D: The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient. E: The static characteristics in Figures 1 to 6 are obtained using