S9012

S9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES z High Collector Current. z Complementary to S9013. z Excellent hFE Linearity. SOT-23 Plastic Package MARKING: 2T1 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -25 V Emitter Base Voltage VEBO -5 V Collector Current IC -500 mA Power Dissipation Ptot 300 mW Tj 150 Thermal Temperature From Junction To Ambient RΘJA 416 Storage Temperature Range Tstg - 55 to + 150 Junction Temperature C O ℃/W C O Characteristics at Ta = 25 OC Symbol Test Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO -25 V Emitter-base breakdown voltage V(BR)EBO IC=-1mA, IB=0 IE=-0.1mA, IE=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) Parameter conditions Collector-emitter saturation voltage VCE(sat) VCE=-1V, IC=50mA IC=-500mA, IB=-50mA Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA DC current gain fT Transition frequency Cob Collector output capacitance Min 120 VCE=-6V,IC=-20mA, f=30MHz Typ Max Unit 400 -0.6 V -1.2 V 150 MHz VCB=-10V, IE=0, f=1MHz 5 CLASSIFICATION OF hFE(1) RANK L H J RANGE 120-200 200-350 300-400 pF S9012 Typical Characteristics Static Characteristic -100 (mA) -350uA -80 Ta=100℃ IC hFE -300uA DC CURRENT GAIN COLLECTOR CURRENT -250uA -60 IC COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -400uA —— hFE 400 -200uA -150uA -40 -100uA 300 Ta=25℃ 200 100 -20 IB=-50uA 0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 —— VCE -10 IC Ta=25℃ -10 IC (mA) IC —— VBEsat -1.2 -500 -100 COLLECTOR CURRENT (V) Ta=100℃ -100 -1 -20 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -0 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -1 -1 -10 COLLECTOR CURRENT fT 500 IC -1 (mA) -10 -100 COLLECTOR CURRENT —— IC 100 Cob/ Cib —— IC (MHz) -500 (mA) VCB/ VEB f=1MHz IE=0/ IC=0 VCE=-6V o Ta=25 C Ta=25℃ Cob CAPACITANCE C TRANSITION FREQUENCY (pF) fT Cib 100 -5 -10 -100 COLLECTOR CURRENT Pc 400 COLLECTOR POWER DISSIPATION Pc (mW) β=10 -0.0 -500 -100 —— IC (mA) Ta 200 100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 1 -0.1 -1 REVERSE VOLTAGE 300 0 10 150 -10 V (V) -20