S9012

S9012 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9013 Excellent hFE linearity 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC= -100µA, Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, Emitter-base breakdown voltage V(BR)EBO IE=-100µA, Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA DC current gain hFE VCE=-1V, IC= -50mA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency fT Collector output capacitance Cob VCE=-6V, Page 1 of 3 conditions IE=0 IB=0 IC=0 MIN TYP MAX UNIT -40 V -25 V -5 V 120 200 IC= -20mA f=30MHz 150 MHz VCB=-10V, IE=0, f=1MHz 5 5/30/2011 pF Typical Characteristics Page 2 of 3 S9012 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/30/2011