PSMN7R0-30YLC,115

PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 - 2.5 - nC QG(tot) total gate charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 - 7.9 - nC 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source Simplified outline 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol mb D G mbb076 S 1 2 3 4 SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R0-30YLC LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 30 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 25 °C; see Figure 1 - 61 A VGS = 10 V; Tmb = 100 °C; see Figure 1 - 43 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 - 245 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 48 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature VESD electrostatic discharge voltage - 260 °C MM (JEDEC JESD22-A115) 190 - V Source-drain diode IS source current Tmb = 25 °C - 44 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 245 A VGS = 10 V; Tj(init) = 25 °C; ID = 61 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped; see Figure 3 - 15 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 003a a g120 80 ID (A) 03na19 120 Pder (%) 60 80 40 40 20 0 0 0 Fig 1. 50 100 150 200 Tmb (C) Continuous drain current as a function of mounting base temperature PSMN7R0-30YLC Product data sheet 0 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 3 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 003aag121 102 IAL (A) (1) 10 (2) 1 10-3 Fig 3. 10-2 10-1 1 tAL (ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003a a g122 103 ID (A) Limit R DS on = VDS / ID 102 tp =10  s 100  s DC 10 1 ms 10 ms 1 100 ms 10-1 10-1 Fig 4. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN7R0-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 4 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 2.9 3.13 K/W 003a a g123 10 Zth(j-mb) (K/W)  = 0.5 1 0.2 0.1 0.05 = P 10-1 0.02 tp T s ingle s hot t tp T 10-2 10-6 Fig 5. 10-5 10-4 10-3 10-2 10-1 tp (s ) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN7R0-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 5 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit - V Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 1.05 1.58 1.95 V ID = 10 mA; VDS = VGS; Tj = 150 °C; see Figure 11 0.5 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 - - 2.35 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 - 7.6 8.9 mΩ VGS = 4.5 V; ID = 20 A; Tj = 150 °C; see Figure 12; see Figure 13 - - 14.7 mΩ VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 - 6 7.1 mΩ VGS = 10 V; ID = 20 A; Tj = 150 °C; see Figure 12; see Figure 13 - - 11.8 mΩ f = 1 MHz - 2.2 4.4 Ω ID = 20 A; VDS = 15 V; VGS = 10 V; see Figure 14; see Figure 15 - 16 - nC ID = 20 A; VDS = 15 V; VGS = 4.5 V; see Figure 14; see Figure 15 - 7.9 - nC ID = 0 A; VDS = 0 V; VGS = 10 V; see Figure 15 - 14 - nC ID = 20 A; VDS = 15 V; VGS = 4.5 V; see Figure 14; see Figure 15 - 2.7 - nC - 1.7 - nC - 1 - nC RDSon RG drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gate-source charge QGS(th-pl) post-threshold gate-source charge QGD gate-drain charge - 2.5 - nC VGS(pl) gate-source plateau voltage ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 - 2.77 - V Ciss input capacitance - 1057 - pF Coss output capacitance VDS = 15 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 235 - pF Crss reverse transfer capacitance - 77 - pF PSMN7R0-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 6 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 15 - ns tr rise time VDS = 15 V; RL = 0.75 Ω; VGS = 4.5 V; RG(ext) = 4.7 Ω - 18 - ns td(off) turn-off delay time - 20 - ns tf fall time Qoss output charge - 7.5 - ns VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 6.4 - nC Source-drain diode VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.86 1.1 V trr reverse recovery time - 25 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 15 V - 13 - nC ta reverse recovery rise time - 16 - ns tb reverse recovery fall time - 9 - ns VGS = 0 V; IS = 20 A; dIS/dt = -100 A/µs; VDS = 15 V; see Figure 18 003a a g124 80 RDS on (m) 10 4.5 ID (A) 003a a g125 20 3.5 15 60 3.0 10 2.8 40 2.6 5 20 VGS (V) =2.4 2.2 0 0 0 1 2 3 4 0 5 4 8 12 VDS (V) Fig 6. Output characteristics; drain current as a function of drain-source voltage; typical values PSMN7R0-30YLC Product data sheet Fig 7. VGS (V) 16 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 7 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 003a a g126 100 gfs (S ) 003a a g127 80 ID (A) 80 60 60 40 40 20 Tj = 150 C 20 0 0 0 Fig 8. 20 40 60 I D (A) 80 Forward transconductance as a function of drain current; typical values 003a a g128 10-1 ID (A) 10 Tj = 25 C 0 Fig 9. 2 3 VGS (V) 4 Transfer characteristics; drain current as a function of gate-source voltage; typical values 003a a g129 3 VGS (th) (V) -2 1 Max (1mA) I D = 5mA Min 10-3 2 Typ Max 1mA 10-4 1 Min (5mA) 10-5 10-6 0 1 2 VGS (V) 3 Fig 10. Sub-threshold drain current as a function of gate-source voltage PSMN7R0-30YLC Product data sheet 0 -60 0 60 120 Tj (C) 180 Fig 11. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 8 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 003a a g130 30 RDS on (m) 25 003a a g131 2 3.0 2.8 a 4.5V 1.5 20 VGS=10V 15 VGS (V) = 3.5 10 1 4.5 0.5 10 5 0 0 20 40 60 I D (A) 80 Fig 12. Drain-source on-state resistance as a function of drain current; typical values 0 -60 0 60 120 180 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003a a g132 10 VDS Tj (C) VGS (V) ID 8 VGS(pl) 6 24V VGS(th) VGS 15V VDS = 6V 4 QGS1 QGS2 QGS QGD QG(tot) 2 003aaa508 0 0 Fig 14. Gate charge waveform definitions PSMN7R0-30YLC Product data sheet 4 8 12 16 20 QG (nC) Fig 15. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 9 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 003a a g133 104 003a a g134 80 IS (A) C (pF) 60 Cis s 103 40 Cos s 102 Crs s 20 Tj = 150 C 10 10-1 1 10 VDS (V) Tj = 25 C 0 102 0 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0.3 0.6 0.9 VS D (V) 1.2 Fig 17. Source current as a function of source-drain voltage; typical values 003a a f 444 ID (A) trr ta tb 0 0.25 IRM I RM t (s ) Fig 18. Reverse recovery timing definition PSMN7R0-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 10 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 7. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A UNIT A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-03-16 11-03-25 MO-235 Fig 19. Package outline SOT669 (LFPAK; Power-SO8) PSMN7R0-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 11 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN7R0-30YLC v.2 20110901 Product data sheet - PSMN7R0-30YLC v.1 - - Modifications: PSMN7R0-30YLC v.1 PSMN7R0-30YLC Product data sheet • • Status changed from objective to product. Various changes to content. 20110711 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 12 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 9. 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Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer PSMN7R0-30YLC Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 13 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology customer uses the product for automotive applications beyond Nexperia’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PSMN7R0-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 © Nexperia B.V. 2017. All rights reserved 14 of 15 PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 01 September 2011