SS8550 SOT23

TRANSISTOR（PNP） FEATURES Complimentary to SS8050 SOT-23 MARKING: Y2 1．BASE 2．EMITTER 3．COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-100mA 200 hFE(2) VCE=-1V, IC=-800mA 40 DC current gain 350 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V, -1 V VBEF IB=-1A -1.55 V Base-emitter positive favor voltage VCE=-10mA VCE= -10V, IC= -50mA Transition frequency output capacitance fT Cob f=30MHz 100 (VCB=-10V,IE=0,f=1MHz) 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. MHz 20 pF 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.