0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
S8550 SOT23

S8550 SOT23

  • 厂商:

    TWGMC(台湾迪嘉)

  • 封装:

    SOT-23

  • 描述:

    晶体管类型:PNP 集射极击穿电压(Vceo):25V 集电极电流(Ic):500mA 功率(Pd):300mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):600mV@500mA,50m...

  • 数据手册
  • 价格&库存
S8550 SOT23 数据手册
S8550 S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 Collector current: IC=0.5A 1.BASE 2.EMITTER 3.COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 µA Collector-base breakdown voltage V(BR)CBO IC = -100µA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage IE=0 hFE(1) VCE= -1V, IC= -50mA 200 hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V 350 DC current gain VCE= -6V, IC= -20mA Transition frequency www.tw-gmc.com fT f=30MHz 1 150 MHz S8550 Typical Characteristics Static Characteristic IC 350uA Ta=100℃ COLLECTOR CURRENT (mA) 300uA 60 250uA 200uA 40 IC — — COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 400uA 80 hFE 1000 DC CURRENT GAIN hFE 100 150uA Ta=25℃ 100 100uA 20 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat — VCE 10 20 3 10 VBEsat 1.2 500 100 30 COLLECTOR CURRENT IC 500 1 (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 Ta=25℃ 0.8 100 Ta=100℃ 10 0.4 Ta=25℃ 30 β=10 β=10 3 1 30 10 COLLECTOR CURRENT IC 500 0.0 500 100 IC Ta=100℃ 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 — — IC VCB/ VEB COMMON EMITTER VCE=1V C 30 Ta=25℃ 10 f=1MHz IE=0/ IC=0 Ta=25℃ Cib 30 CAPACITANCE (pF) COLLECTOR CURRENT (mA) IC 100 500 (mA) Ta=100℃ 3 1 Cob 10 3 0.3 0.1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 1 0.3 — — IC PC — — 400 V 20 (V) Ta 300 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY (MHz) fT VCE=6V Ta=25℃ 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) 200 100 100 10 10 COLLECTOR CURRENT www.tw-gmc.com 0 100 30 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 (℃ ) 150 S8550 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 3
S8550 SOT23 价格&库存

很抱歉,暂时无法提供与“S8550 SOT23”相匹配的价格&库存,您可以联系我们找货

免费人工找货