S8550 SOT523

S8550T TRANSISTOR (PNP) SOT-523 FEATURES Complimentary to S8050T 1. BASE 2. EMITTER Collector current: IC=0.5A MARKING : 3. COLLECTOR 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC = -100µA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 µA IE=0 hFE(1) VCE= -1V, IC= -50mA 120 400 hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V DC current gain VCE= -6V, IC= -20mA fT Transition frequency f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range Page 1 of 3 L H J 120-200 200-350 300-400 4 /22/2019 Typical Characteristics Page 2 of 3 S8550T 4 /22/2019 Page 3 of 3 4 /22/2019