SS8550 SOT89

SOT-89Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Compliment to SS8050 MARKING: Y2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.5 W RΘJA Thermal Resistance From Junction To Ambient 250 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE= -1V, IC= -100mA 120 hFE(2) VCE= -1V, IC= -800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V Base-emitter on voltage VBE(on) Ic=-1V,VCE=-10mA -1 V -1.55 V DC current gain Base-emitter positive favor voltage VBEF Transition frequency output capacitance IB=-1A fT VCE= -10V, IC= -50mA Cob VCB=-10V,IE=0,f=1MHz 400 100 MHz 20 CLASSIFICATION OF hFE(1) Rank Range C D D1 120-200 160-300 200-350 1 D2 300-400 pF Static Characteristic -140 FE 300 -350uA -80 Ta=25℃ h -400uA -100 DC CURRENT GAIN IC(mA) COLLECTOR CURRENT -450uA -300uA -250uA -60 -200uA -150uA -40 —— IC Ta=100℃ COMMON EMITTER Ta=25℃ -500uA -120 hFE 600 100 30 -100uA -20 COMMON EMITTER VCE =-1V IB=-50uA -0 -0.0 -0.5 -1.0 -1.5 -2.0 COLLECTOR-EMITTER VOLTAGE VBEsat -1.2 —— VCE 10 -2.5 IC COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) Ta=100℃ -0.4 β=10 -1 -10 -3 -100 -30 COLLECTOR CURRENT VBE -1500 IC —— IC IC —— Ta=100℃ -100 Ta=25℃ -30 -10 -3 β=10 -1 -10 -3 -100 -30 COLLECTOR CURRENT (mA) IC Cob/ibC 100 -1000 -1500 -300 IC (mA) /V —— VCB EB COMMON EMITTER VCE =-1V f=1MHz IE=0/I C=0 Ta=25℃ (pF) -300 Ta=100℃ Cib C -100 -1000 -1500 (mA) -300 -1 -1000 -1500 -300 CAPACITANCE (mA) -1000 IC VCEsat -300 -100 CEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ -0.6 -0.0 COLLCETOR CURRENT -30 -10 -1000 -0.2 -30 T a=25℃ -10 Cob 30 -3 -1 -0.0 -0.2 -0.4 -0.6 -0.8 BASE-EMMITER VOLTAGE fT 500 —— VBE -1.0 10 -0.2 -1.2 IC COLLECTOR POWER DISSIPATION P (mW) fT(MHz) C VCE =-10V Ta=25℃ -3 -30 -10 COLLECTOR CURRENT PC 600 30 -1 IC -3 -1 REVERSE VOLTAGE 100 10 -0.5 (mV) 300 TRANSITION FREQUENCY -3 COLLECTOR CURRENT -1.0 -0.8 -1 (V) (mA) a 400 300 200 100 0 25 50 75 AMBIENT TEMPERATURE 2 20 (V) 500 0 -100 —— T -10 V 100 Ta 125 (℃) 150 SS8550 SOT-89 Package Outline Dimensions 3