WSD4050DN

WSD4050DN N-Ch MOSFET General Description Product Summery The WSD4050DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 7.4mΩ 50A Applications The WSD4050DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features DFN3.3X3.3-EP Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM@TC=25℃ EAS Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V G 50 A G 30 A 105 A 60 mJ 20 A Total Power Dissipation A 5.0 W Total Power Dissipation A 3.2 W -55 to 150 ℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V C Pulsed Drain Current Avalanche Energy ,Single Pulse (L=0.3mH) Avalanche Current IAS PD@TA=25℃ PD@TA=70℃ TJ Rating TSTG Storage and Junction Temperature Range Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC A www.winsok.tw Thermal Resistance Junction-Case Page 1 A Typ. Max. Unit --- 60 ℃/W --- 4.6 ℃/W Rev1.Apr.2019 WSD4050DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current orward Transconductance Rg Gate Resistance Qg Total Gate Charge (10V) Qgs Qgd Td(on) Tr Td(off) Tf VGS=0V , ID=250uA 2 △VGS(th) gf gfs Conditions Gate-Source Charge VGS=10V , ID=7A VGS=4.5V , ID=5A Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 40 ----- Max. Unit --- V 7.4 9.5 mΩ 10 12 mΩ 1.5 2.0 V -6. --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ ----- - 2 VDS=32V , VGS=0V , TJ=55℃ --- - 10 VGS=±20V , VDS=0V ----- - ±100 nA VDS=5V , ID=20A --- 70 --- S VDS=0V , VGS=0V , f=1MHz --- 1.8 2.7 Ω --- 22 45 --- 5.5 7.5 --- 3.0 5.1 --- 7.5 --- --- 2.0 --- --- 23 --- --- 3.0 --- --- 1284 --- --- 145 --- --- 55 --- VDS=20V, VGS=10V, IDS=20A VDS=20V, RL=1Ω , VGS=10V, RG=3Ω. VDS=20V , VGS=0V , f=1MHz 1.0 Typ. --- --- VGS=VDS , ID =250uA Gate-Drain Charge Turn-On Delay Time Min. uA nC ns pF A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.6°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.winsok.tw Page 4 Rev1.Apr.2019 WSD4050DN N-Ch MOSFET Typical Operating Characteristics (Cont.) 50 40 30 Current rating ID (A) Power Dissipation (W) 40 30 20 10 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 1 TA=25°C Power (W) Eoss(uJ) 1000 100 0.5 10 0 0 10 20 30 40 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZθJA Normalized Transient Thermal Resistance 0.001 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) www.winsok.tw Page 5 Rev1.Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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