0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBT5551

MMBT5551

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 SOT23-3 NPN VCEO=160V VCE(sat)=0.2V Ic=0.6A PD=350mW

  • 数据手册
  • 价格&库存
MMBT5551 数据手册
MMBT5551 NPN Transistor SOT-23 Features  For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : G1 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Maximum Power Dissipation PD 350 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision:2.0 Mar-2021 1/6 MMBT5551 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 80 -- 80 250 30 -- ICBO -- 50 nA IEBO -- 50 nA V(BR)CBO 180 -- V V(BR)CEO 160 -- V V(BR)EBO 6 -- V VCE(sat) -- 0.15 V -- 0.2 -- 1 -- 1 FT 100 300 MHz Cob -- 6 pF DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA HFE at VCE = 5 V, IC = 50 mA Collector Base Cutoff Current at VCB = 120V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 μA -- Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA VBE(sat) at IC = 50 mA, IB = 5 mA Transition Frequency at VCE = 10 V, IC = 10 mA,f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz www.pingjingsemi.com Revision:2.0 Mar-2021 V 2/6 MMBT5551 NPN Transistor Typical Characteristic Curves www.pingjingsemi.com Revision:2.0 Mar-2021 3/6 MMBT5551 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBT5551 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision:2.0 Mar-2021 4/6 MMBT5551 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision:2.0 Mar-2021 5/6 MMBT5551 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision:2.0 Mar-2021 6/6
MMBT5551 价格&库存

很抱歉,暂时无法提供与“MMBT5551”相匹配的价格&库存,您可以联系我们找货

免费人工找货
MMBT5551
  •  国内价格
  • 50+0.06800
  • 150+0.05800
  • 1000+0.04800
  • 5000+0.04400

库存:0