SS22 – SS215
Taiwan Semiconductor
2A, 20V - 150V Schottky Barrier Surface Mount Rectifier
FEATURES
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KEY PARAMETERS
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
APPLICATIONS
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PARAMETER
VALUE
UNIT
IF
2
A
VRRM
20 - 150
V
IFSM
50
A
TJ MAX
125, 150
°C
Package
DO-214AA (SMB)
Configuration
Single die
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
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Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.093g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Repetitive peak reverse voltage
VRRM
SS
22
SS
22
20
Reverse voltage, total rms value
VR(RMS)
14
PARAMETER
SYMBOL
Marking code on the device
Forward current
Surge peak forward current, 8.3ms
single half sine-wave superimposed
on rated load
Critical rate of rise of off-state voltage
SS
23
SS
23
30
SS
24
SS
24
40
SS
25
SS
25
50
SS
26
SS
26
60
SS
29
SS
29
90
21
28
35
42
63
SS SS
UNIT
210 215
SS
SS
210 215
100 150
V
70
105
V
IF
2
A
IFSM
50
A
dV/dt
10,000
V/μs
Junction temperature
TJ
Storage temperature
TSTG
- 55 to +125
- 55 to +150
- 55 to +150
1
°C
°C
Version: M2102
SS22 – SS215
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
RӨJL
24
°C/W
Junction-to-ambient thermal resistance
RӨJA
70
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
-
0.50
V
-
0.70
V
-
0.85
V
-
0.95
V
-
0.40
V
-
0.65
V
-
0.70
V
-
0.80
V
-
400
µA
-
100
µA
-
10
mA
-
5
mA
-
-
mA
SS22
SS23
SS24
Forward voltage
SS25
(1)
SS26
IF = 2A, TJ = 25°C
VF
SS29
SS210
SS215
SS22
SS23
SS24
Forward voltage
SS25
(1)
SS26
IF = 2A, TJ = 100°C
VF
SS29
SS210
SS215
SS22
SS23
SS24
Reverse current @ rated VR
(2)
SS25
SS26
TJ = 25°C
IR
SS29
SS210
SS215
SS22
SS23
SS24
Reverse current @ rated VR
(2)
SS25
SS26
TJ = 100°C
IR
SS29
SS210
SS215
2
Version: M2102
SS22 – SS215
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
-
-
mA
-
-
mA
-
5
mA
SS22
SS23
SS24
Reverse current @ rated VR
SS25
(2)
SS26
TJ = 125°C
IR
SS29
SS210
SS215
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
PACKING
SS2x
DO-214AA (SMB)
3,000 / Tape & Reel
Notes:
1. "x" defines voltage from 20V(SS22) to 150V(SS215)
3
Version: M2102
SS22 – SS215
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
1000
f=1.0MHz
Vsig=50mVp-p
SS25-SS215
2
CAPACITANCE (pF)
SS22-SS24
1
0
30
60
90
120
100
SS29-SS215
SS22-SS24
SS25-SS26
10
150
0.1
1
LEAD TEMPERATURE (°C)
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.4 Typical Forward Characteristics
100
TJ=125°C
10
1
0.1
TJ=75°C
0.01
TJ=25°C
0.001
10
20
30
40
50
60
70
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
SS22-SS24
SS25-SS215
10
80
90
10010
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
SS25-SS26
10
TJ=125°C
0.1
TJ=25°C
SS29-SS210
SS22-SS24
1
0.01
SS215
0.001
0.3
0.1
0
100
UF1DLW
1
(A)
AVERAGE FORWARD CURRENT (A)
3
0.4
0.2
0.5
0.4
0.6
0.6
0.7
0.8
Pulse width
Pulse width 300μs
1% duty cycle
0.8
0.9
1
1.1
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
4
Version: M2102
1.2
SS22 – SS215
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-Repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
60
8.3ms single half sine wave
50
40
30
20
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
5
Version: M2102
SS22 – SS215
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
6
P/N
= Marking Code
G
= Green Compound
YW
= Date Code
F
= Factory Code
Version: M2102
SS22 – SS215
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7
Version: M2102
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