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SS26HM4G

SS26HM4G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    -

  • 描述:

    SS26HM4G

  • 数据手册
  • 价格&库存
SS26HM4G 数据手册
SS22 – SS215 Taiwan Semiconductor 2A, 20V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for over-voltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 2 A VRRM 20 - 150 V IFSM 50 A TJ MAX 125, 150 °C Package DO-214AA (SMB) Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.093g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM SS 22 SS 22 20 Reverse voltage, total rms value VR(RMS) 14 PARAMETER SYMBOL Marking code on the device Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage SS 23 SS 23 30 SS 24 SS 24 40 SS 25 SS 25 50 SS 26 SS 26 60 SS 29 SS 29 90 21 28 35 42 63 SS SS UNIT 210 215 SS SS 210 215 100 150 V 70 105 V IF 2 A IFSM 50 A dV/dt 10,000 V/μs Junction temperature TJ Storage temperature TSTG - 55 to +125 - 55 to +150 - 55 to +150 1 °C °C Version: M2102 SS22 – SS215 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 24 °C/W Junction-to-ambient thermal resistance RӨJA 70 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 0.50 V - 0.70 V - 0.85 V - 0.95 V - 0.40 V - 0.65 V - 0.70 V - 0.80 V - 400 µA - 100 µA - 10 mA - 5 mA - - mA SS22 SS23 SS24 Forward voltage SS25 (1) SS26 IF = 2A, TJ = 25°C VF SS29 SS210 SS215 SS22 SS23 SS24 Forward voltage SS25 (1) SS26 IF = 2A, TJ = 100°C VF SS29 SS210 SS215 SS22 SS23 SS24 Reverse current @ rated VR (2) SS25 SS26 TJ = 25°C IR SS29 SS210 SS215 SS22 SS23 SS24 Reverse current @ rated VR (2) SS25 SS26 TJ = 100°C IR SS29 SS210 SS215 2 Version: M2102 SS22 – SS215 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - - mA - - mA - 5 mA SS22 SS23 SS24 Reverse current @ rated VR SS25 (2) SS26 TJ = 125°C IR SS29 SS210 SS215 Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SS2x DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 20V(SS22) to 150V(SS215) 3 Version: M2102 SS22 – SS215 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 f=1.0MHz Vsig=50mVp-p SS25-SS215 2 CAPACITANCE (pF) SS22-SS24 1 0 30 60 90 120 100 SS29-SS215 SS22-SS24 SS25-SS26 10 150 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TJ=125°C 10 1 0.1 TJ=75°C 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics SS22-SS24 SS25-SS215 10 80 90 10010 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) SS25-SS26 10 TJ=125°C 0.1 TJ=25°C SS29-SS210 SS22-SS24 1 0.01 SS215 0.001 0.3 0.1 0 100 UF1DLW 1 (A) AVERAGE FORWARD CURRENT (A) 3 0.4 0.2 0.5 0.4 0.6 0.6 0.7 0.8 Pulse width Pulse width 300μs 1% duty cycle 0.8 0.9 1 1.1 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) 4 Version: M2102 1.2 SS22 – SS215 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Maximum Non-Repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 60 8.3ms single half sine wave 50 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 5 Version: M2102 SS22 – SS215 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: M2102 SS22 – SS215 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: M2102
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