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MH248ESO

MH248ESO

  • 厂商:

    MST

  • 封装:

    SOT23-3

  • 描述:

    霍尔线性传感器 SOT23-3L SMT 5V

  • 数据手册
  • 价格&库存
MH248ESO 数据手册
MH248 Specifications Micropower Hall Effect Switch MH248 Hall-effect sensor is a temperature stable, stress-resistant , micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH248 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation. MH248 is rated for operation between the ambient temperatures –40℃ and + 85℃ for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height),SQ is an QFN2020-3(0.5 mm nominal height),Tsot-23 is an ST(0.7 mm nominal height) ,a miniature low-profile surface-mount package, while package UA is a three-lead ultra-mini SIP for through-hole mounting. The package type is in a lead Halogen Free version was verified by third party Lab. Features and Benefits    CMOS Hall IC Technology Solid-State Reliability Micro power consumption for battery-powered applications       Omni polar, output switches with absolute value of North or South pole from magnet Operation down to 2.5 V and Max at 3.5V. High Sensitivity for direct reed switch replacement applications Multi Small Size option Custom sensitivity selection is available in optional package. Pb Free/Green chip is qualified by third party lab. Applications   Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip   Video Set) Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications 032315 Page 1 of 6 Rev. 1.04 MH248 Specifications Micropower Hall Effect Switch Ordering Information XXXXXXXXX - X Company Name and Product Category MH:MST Hall Effect/MP:MST Power IC Part number Sorting Code 181,182,183,184,185,248,249,276,477,381,381F,381R,382….. If part # is just 3 digits, the forth digit will be omitted. Package type Temperature range Temperature Code E: 85 ℃, I: 105 ℃, K: 125 ℃, L: 150 ℃ Package type Part number UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23, Company Name and Product Category SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin), SS:TSOT-26,SD:DFN-6 Sorting α,β,Blank….. Part No. MH248EUA MH248ESO MH248EST Temperature Suffix E (-40℃ to + 85℃) E (-40℃ to + 85℃) E (-40℃ to + 85℃) Package Type UA (TO-92S) SO (SOT-23) ST (TSOT-23) MH248ESQ MH248ESO-α MH248ESO-β MH248ESO-γ E E E E SQ SO SO SO (-40℃ (-40℃ (-40℃ (-40℃ to to to to + + + + 85℃) 85℃) 85℃) 85℃) (QFN2020-3) (SOT-23) (SOT-23) (SOT-23) Custom sensitivity selection is available by MST sorting technology Functional Diagram VDD Awake/Sleep Timing Control Out Offset Cancellation Control Logic Amp Hall Sensor GND Note: Static sensitive device; please observe ESD precautions. Reverse V DD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. 032315 Page 2 of 6 Rev. 1.04 MH248 Specifications Micropower Hall Effect Switch Absolute Maximum Ratings At (Ta=25℃) Characteristics Values Unit Supply voltage,(VDD) 5 V Output Voltage,(Vout) 5 V -0.3 V Unlimited Gauss 2 mA Operating temperature range, (Ta) -40 to +85 ℃ Storage temperature range, (Ts) -55 to +150 ℃ Maximum Junction Temp,(Tj) 150 ℃ (θJA) UA / SO / ST / SQ 206 / 543 / 310 / 543 ℃/W (θJC) UA / SO / ST /SQ 148 / 410 / 223 / 410 ℃/W Package Power Dissipation, (PD) UA / SO / ST / SQ 606 / 230 / 400 / 230 mW Reverse voltage, (VDD) (VOUT) Magnetic flux density Output current(IOUT) Thermal Resistance Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters TA=+25℃, VDD=3.0V Parameters Test Conditions Supply Voltage,(VDD) Operating Supply Current,(IDD) Min Typ 2.5 Max Units 3.5 V Awake State 2.5 4.0 mA Sleep State 8.0 12 μA Average 10 16 μA Output Leakage Current,(Ioff) Output off 1 uA Output Low Voltage,(Vsat) IOUT=1mA 0.3 V Awake mode time,(Taw) Operating 70 uS Sleep mode time,(TSL) Operating 70 mS 0.1 % Duty Cycle,(D,C) Operate Point, Release Point Hysteresis,(BHYS) 032315 (BOPS) S pole to branded side, B > BOP, Vout On 6 60 (BOPN) N pole to branded side, B > BOP, Vout On -60 -6 (BRPS) S pole to branded side, B < BRP, Vout Off 5 59 (BRPN) N pole to branded side, B < BRP, Vout Off -60 -5 |BOPx - BRPx| Page 3 of 6 7 Gauss Gauss Gauss Rev. 1.04 MH248 Specifications Micropower Hall Effect Switch Typical Application circuit Vcc C1:10nF C2:100pF R1:100KΩ R1 VDD MH182 MH248 C1 Out Out GND C2 Sensor Location, Package Dimension and Marking MH248 Package UA Package Hall Chip location 2.00 0.9 248 XXX Hall Sensor Location NOTES: Mark 1).Controlling dimension: mm 2).Leads must be free of flash Output Pin Assignment (Top view) and plating voids 3).Do not bend leads within 248 XXX 1 mm of lead to package interface. 4).PINOUT: 032315 Pin 1 VDD Pin 2 GND Pin 3 Output Page 4 of 6 1 VDD 2 GND 3 Out Rev. 1.04 MH248 Specifications Micropower Hall Effect Switch SO Package Hall Plate Chip Location (Top View) (Bottom view) 3 3 0.80 248XX 1 2 2 1 Hall Sensor Location 1.45 NOTES: 1. PINOUT (See Top View at left :) Pin 1 VDD Pin 2 Output Pin 3 GND 2. Controlling dimension: mm 3. Lead thickness after solder plating will be 0.254mm maximum ST Package (TSOT-23) (Top View) Hall Plate Chip Location (Bottom view) 3 3 0.80 248XX 1 2 2 Hall Sensor Location 1 1.45 NOTES: 1. 2. 032315 PINOUT (See Top View at left:) Pin 1 VDD Pin 2 Output Pin 3 GND Controlling dimension: mm; Page 5 of 6 Rev. 1.04 MH248 Specifications Micropower Hall Effect Switch SQ Package Hall Plate Chip Location 248 XX (Top view) NOTES: 3. 1 3 PINOUT (See Top View at left) 1 2 4. Pin 1 VDD Pin 2 Output Pin 3 GND 1 Hall Sensor Location 1 2 Controlling dimension: mm; 5. 3 Chip rubbing will be 10mil 6. maximum; Chip must be in PKG. center. 032315 Page 6 of 6 Rev. 1.04
MH248ESO 价格&库存

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MH248ESO
  •  国内价格
  • 1+1.34260
  • 30+1.29465
  • 100+1.24670
  • 500+1.15080
  • 1000+1.10285
  • 2000+1.07408

库存:20