HYG011N04LS1C2

HYG011N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  Pin Description 40V/165A D D D D D D D D RDS(ON)= 1.1mΩ (typ.) @VGS = 10V RDS(ON)= 1.5mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available S S S G G S S S Pin1 PDFN5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information Package Code C2 C2: PDFN5*6-8L G011N04 Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HYG011N04LS1C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V TJ Junction Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C Tc=25°C 165 A Tc=25°C 660 A Tc=25°C 165 A Tc=100°C 116 A Tc=25°C 75 W Tc=100°C 37.5 W IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 2 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 45 °C/W EAS SinglePulsed-Avalanche Energy *** 540 mJ L=0.3mH * Repetitive rating；pulse width limited by max.junction temperature. ** Surface mounted on FR-4 board. *** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG011N04LS1 Unit Min Typ. Max 40 - - V - - 1 μA - - 50 μA 3.0 V ±100 nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=40V,VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250μA 1.0 1.8 Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=10V,IDS=40A - 1.1 1.4 VGS=4.5V,IDS=40A - 1.5 1.9 ISD=20A,VGS=0V - 0.75 1.2 V - 45 - ns - 51 - nC Drain-Source On-State Resistance mΩ Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=40A,dISD/dt=100A/μs www.hymexa.com V1.0 2 HYG011N04LS1C2 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG011N04LS1 Min Typ. Max - 1.9 - - 5876 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V, Frequency=1.0MHz VGS=0V, Coss Output Capacitance VDS=25V, - 1278 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 58 - td(ON) Turn-on Delay Time - 15 - Tr Turn-on Rise Time VDD=20V,RG=2.5Ω, - 98 - td(OFF) Turn-off Delay Time IDS=40A,VGS=10V - 215 - - 99 - - 89 - - 41 - - 20 - - 14 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge （VGS=10V） Qg Total Gate Charge （VGS=4.5V） Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =32V, ID=40A nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com V1.0 3 HYG011N04LS1C2 Typical Operating Characteristics ID-Drain Current(A) Voltage Figure 2: Drain Current Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Impedance (℃/W) Voltage RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) Voltage Maximum Effective Transient Thermal Impedance, Junction-to-Case Figure 6: Drain-Source On Resistance VDS-Drain-Source Voltage(V) ID-Drain Current(A) Thermal Normalized Transient Figure 4: Thermal Transient Impedance Z jc Voltage ID-Drain Current(A) Figure 3: Safe Operation Area ID-Drain Current(A) www.hymexa.com V1.0 4 HYG011N04LS1C2 Typical Operating Characteristics(Cont.) Voltage IS-Source Current (A) Figure 8: Source-Drain Diode Forward Voltage Normalized On-Resistance(A) Figure 7: On-Resistance vs. Temperature VDS-Drain-Source Voltage (V) Voltage Figure 10: Gate Charge Characteristics Voltage Figure 9: Capacitance Characteristics VGS-Gate-Source Voltage (V) VSD-Source-Drain Voltage(V) C-Capacitance(pF) Tj-Junction Temperature (℃) QG-Gate Charge (nC) www.hymexa.com V1.0 5 HYG011N04LS1C2 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 6 HYG011N04LS1C2 Device Per Unit Package Type Unit Quantity PDFN5*6-8L Reel 5000 Package Information PDFN5*6-8L www.hymexa.com V1.0 7 HYG011N04LS1C2 Carrier Tape Taping Direction Information www.hymexa.com V1.0 8 HYG011N04LS1C2 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 9 HYG011N04LS1C2 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness