HYG023N04LS1D
Single N-Channel Enhancement Mode MOSFET
Feature
Pin Description
40V/120A
RDS(ON)= 2.0 mΩ(typ.) @VGS = 10V
RDS(ON)= 2.8 mΩ(typ.) @VGS = 4.5V
100% Avalanche Tested
Reliable and Rugged
G
Halogen- Free Devices Available
D
S
Applications
Power Management for DC/DC
Ordering and Marking Information
Package Code
D
D: TO-252-2L
G023N04
Date Code
XYMXXXXXX
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
www.hymexa.com
1`
V1.1
HYG023N04LS1D
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25℃ Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
V
VGSS
Gate-Source Voltage
±20
V
TJ
Junction Temperature Range
-55 to 175
℃
TSTG
Storage Temperature Range
-55 to 175
℃
Tc=25℃
120
A
Tc=25℃
570
A
Tc=25℃
120
A
Tc=100℃
85
A
Tc=25℃
75
W
Tc=100℃
37.5
W
IS
Source Current-Continuous(Body Diode)
Mounted on Large Heat Sink
Note:
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RJC
Thermal Resistance, Junction-to-Case
2.0
℃/W
RJA
Thermal Resistance, Junction-to-Ambient **
60.0
℃/W
EAS
Single Pulsed-Avalanche Energy ***
430***
mJ
L=0.3mH
* Repetitive rating;pulse width limited by max.junction temperature.
** Surface mounted on FR-4 board.
*** Limited by TJmax , starting TJ=25℃, L = 0.3mH, RG =25Ω., VGS =10V.
Electrical Characteristics(Tc =25℃ Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG023N04LS1
Unit
Min
Typ.
Max
40
-
-
V
-
-
1
μA
-
-
50
μA
1.4
1.9
2.5
V
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
VGS(th)
IGSS
RDS(ON)
VGS=0V,IDS=250μA
VDS=40V,VGS=0V
TJ=125℃
Gate Threshold Voltage
VDS=VGS, IDS=250μA
Gate-Source Leakage Current
VGS=±20V,VDS=0V
-
-
±100
nA
VGS=10V,IDS=40A
-
2.0
2.6
mΩ
VGS=4.5V,IDS=40A
-
2.8
3.5
mΩ
ISD=40A,VGS=0V
-
0.8
1.2
V
-
33.3
-
ns
-
29.5
-
nC
Drain-Source On-State Resistance
Diode Characteristics
VSD*
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
www.hymexa.com
ISD=20A,dISD/dt=100A/μs
2`
V1.1
HYG023N04LS1D
Electrical Characteristics (Cont.) (Tc =25℃ Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG023N04LS1
Min
Typ.
Max
Unit
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
2
-
Ciss
Input Capacitance
VGS=0V,
-
4032
-
Coss
Output Capacitance
VDS=25V,
-
809
-
Crss
Reverse Transfer Capacitance
Frequency=500KHz
-
45
-
td(ON)
Turn-on Delay Time
-
14
-
Tr
Turn-on Rise Time
VDD=20V,RG=4Ω,
-
49
-
td(OFF)
Turn-off Delay Time
IDS=20A,VGS=10V
-
42
-
-
43
-
-
58.7
-
Tf
Turn-off Fall Time
Gate Charge
Ω
pF
ns
Characteristics
Qg
Total Gate Charge(VGS=10V)
Qg
Total Gate Charge(VGS=4.5V)
VDS =32V, VGS=10V,
-
27.4
-
Qgs
Gate-Source Charge
ID=20A
-
15.1
-
Qgd
Gate-Drain Charge
-
9.3
-
Note: *Pulse test,pulse width ≤ 300us,duty cycle ≤ 2%
www.hymexa.com
3`
V1.1
nC
HYG023N04LS1D
Typical Operating Characteristics
Figure 2: Drain Current
ID-Drain Current(A)
Power Dissipation (w)
Figure 1: Power Dissipation
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Zθjc
ID-Drain Current(A)
Thermal Impedance
Figure 4: Thermal Transient Impedance
Normalized Transient
Figure 3: Safe Operation Area
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
VDS-Drain-Source Voltage(V)
Figure 6: Drain-Source On Resistance
ID-Drain Current(A)
RDS(ON)-ON-Resistance(mΩ)
Figure 5: Output Characteristics
VDS-Drain-Source Voltage (V)
Typical Operating Characteristics(Cont.)
www.hymexa.com
4`
ID-Drain Current(A)
V1.1
HYG023N04LS1D
Figure 8: Source-Drain Diode Forward
IS-Source Current (A)
Normalized On-Resistance
Figure 7: On-Resistance vs. Temperature
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 10: Gate Charge Characteristics
C-Capacitance(pF)
VGS-Gate-Source Voltage (V)
Figure 9: Capacitance Characteristics
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
Avalanche Test Circuit
www.hymexa.com
5`
V1.1
HYG023N04LS1D
Switching Time Test Circuit
Gate Charge Test Circuit
Device Per Unit
www.hymexa.com
6`
V1.1
HYG023N04LS1D
Package Type
Unit
Quantity
TO-252-2L
TO-252-2L
Tube
Reel
75
2500
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.00
-
0.20
A2
0.97
1.07
1.17
b
0.68
0.78
0.90
b3
5.20
5.33
5.50
c
0.43
0.53
0.63
D
5.98
6.10
6.22
D1
5.30REF
E
6.40
6.60
6.80
E1
4.63
-
-
e
2.286BSC
H
9.40
10.10
10.50
L
1.38
1.50
1.75
L1
2.90REF
L2
0.51BSC
L3
0.88
-
1.28
L4
-
-
1.00
L5
1.65
1.80
1.95
θ
0°
-
8°
Classification Profile
www.hymexa.com
7`
V1.1
HYG023N04LS1D
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmaxto TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5℃ of the specified
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax)
Time 25℃ to peak temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 ℃
150 ℃
150 ℃
200 ℃
60-120 seconds
60-120 seconds
3 ℃/second max.
3℃/second max.
183 ℃
217 ℃
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
20** seconds
30** seconds
6 ℃/second max.
6 ℃/second max.
6 minutes max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
www.hymexa.com
8`
V1.1
HYG023N04LS1D
Package
Volume mm³
Volume mm³
Thickness
很抱歉,暂时无法提供与“HYG023N04LS1D”相匹配的价格&库存,您可以联系我们找货
免费人工找货