HYG023N04NR1D

HYG023N04NR1D Single N-Channel Enhancement Mode MOSFET Feature  Pin Description 45V/140A RDS(ON)= 2.3 mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  G Halogen- Free Devices Available D S Applications  Load Switch  Battery Protection Single N-Channel MOSFET Ordering and Marking Information Package Code D D: TO-252-2L G023N04 Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.1 HYG023N04NR1D Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25℃ Unless Otherwise Noted) VDSS Drain-Source Voltage 45 V VGSS Gate-Source Voltage ±25 V TJ Junction Temperature Range -55 to 175 ℃ TSTG Storage Temperature Range -55 to 175 ℃ Tc=25℃ 140 A Tc=25℃ 560 A Tc=25℃ 140 A Tc=100℃ 99 A Tc=25℃ 100 W Tc=100℃ 50 W IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 1.5 ℃/W RJA Thermal Resistance, Junction-to-Ambient ** 60 ℃/W EAS Single Pulsed-Avalanche Energy *** 390 mJ L=0.3mH * Repetitive rating；pulse width limited by max.junction temperature. ** Surface mounted on FR-4 board. *** Limited by TJmax , starting TJ=25℃, L = 0.3mH, RG =25Ω., VGS =10V. Electrical Characteristics(Tc =25℃ Unless Otherwise Noted) Symbol Parameter Test Conditions HYG023N04NR1 Unit Min Typ. Max 45 - - V - - 1 μA - - 50 μA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON) VGS=0V,IDS=250μA VDS=45V,VGS=0V TJ=125℃ Gate Threshold Voltage VDS=VGS, IDS=250μA 2 2.8 4 V Gate-Source Leakage Current VGS=±25V,VDS=0V - - ±100 nA Drain-Source On-State Resistance VGS=10V,IDS=40A - 2.3 2.9 mΩ ISD=40A,VGS=0V - 0.8 1.0 V - 22 - ns - 16 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=20A,dISD/dt=100A/μs 2 V1.1 HYG023N04NR1D Electrical Characteristics (Cont.) (Tc =25℃ Unless Otherwise Noted) Symbol Parameter Test Conditions HYG023N04NR1 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 0.6 - Ciss Input Capacitance VGS=0V, - 3412 - Coss Output Capacitance VDS=25V, - 615 - Crss Reverse Transfer Capacitance Frequency=1MHz - 485 - td(ON) Turn-on Delay Time - 16 - Tr Turn-on Rise Time VDD=20V,RG=4Ω, - 59 - td(OFF) Turn-off Delay Time IDS=20A,VGS=10V - 40 - - 62 - - 82 - - 16 - - 31 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =32V, VGS=10V, ID=20A Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com 3 V1.1 nC HYG023N04NR1D Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Zθjc ID-Drain Current(A) Thermal Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com ID-Drain Current(A) 4 V1.1 HYG023N04NR1D Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com QG-Gate Charge (nC) 5 V1.1 HYG023N04NR1D Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 6 V1.1 HYG023N04NR1D Device Per Unit Package Type TO-252-2L TO-252-2L Unit Quantity Tube Reel 75 2500 Package Information TO-252-2L COMMON DIMENSIONS mm SYMBOL MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 7 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 - - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° V1.1 HYG023N04NR1D Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5℃ of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25℃ to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 ℃ 150 ℃ 150 ℃ 200 ℃ 60-120 seconds 60-120 seconds 3 ℃/second max. 3℃/second max. 183 ℃ 217 ℃ 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 ℃/second max. 6 ℃/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 8 V1.1 HYG023N04NR1D Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness