WSD6036DN

WSD6036DN N-Ch MOSFET General Description Product Summery The WSD6036DN is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON 60V 12mΩ ID 50A Applications Secondary Side Synchronous Rectification The WSD6040DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. DC-DC Converter Motor Control Load Switching Features Lead Fre e an d Green Devices Available DFN3x3-8_EP1 Pin Configuration (RoH SCom plia nt) 100% UIS + Rg Tested Reliable and Rugged Moistu re Sensitivity Level MSL1 (per JED EC J-STD-020D) Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V Continuous Drain Current ID IDM a PD Pulsed Drain Current Maximum Power Dissipation TC=25°C 50 TC=100°C 30 TC=25°C 90 TC=25°C 45 TC=100°C 18 A A W Single Pulse Avalanche Energy L=0.1mH 39.2 mJ IS Diode Continuous Forward Current TC=25°C 50 A TJ Maximum Junction Temperature 150 ℃ -55 to 150 ℃ EAS c TSTG b Storage Temperature Range RθJA Thermal Resistance Junction to ambient Steady State 62 ℃/W RθJC Thermal Resistance-Junction to Case Steady State 3.3 ℃/W Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in2 pad area. Note c：UIS tested and pulse width limited by maximum junction temperature 150℃(initial temperature Tj=25℃). www.winsok.tw Page 1 Rev1.1 Mar.2022 WSD6036DN N-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Conditions Parameter Min. Typ. Max. Unit Static V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VGS = 0V, ID = 250μA 60 V VDS = 48 V, VGS = 0V 1 TJ=85°C 30 VGS = ±20V, VDS = 0V µA ±100 nA 1.6 2.5 V VGS = 10V, ID = 25A 14 17.5 mΩ VGS = 4.5V, ID = 20A 19 22 mΩ On Characteristics VGS(TH) RDS(on)d Gate Threshold Voltage Drain-Source On-state Resistance VGS = VDS, IDS = 250µA 1 Switching Qg Total Gate Charge Qgs Gate-Sour Qgd Gate-Drain Charge td (on) tr td(off) VDS=30V VGS=10V ID=25A Charge Turn-on Delay Time VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω Turn-on Rise Time Turn-off Delay Time tf Turn-off Fall Time Rg Gat resistance VGS=0V, VDS=0V, f=1MHz 42 nC 6.4 nC 9.6 nC 17 ns 9 ns 58 ns 14 ns 1.5 Ω 2100 pF 140 pF 100 pF Dynamic Ciss In Capacitance Coss Out Crss Reverse Transfer Capacitance VGS=0V VDS=30V f=1MHz Capacitance Drain-Source Diode Characteristics and Maximum Ratings IS Continuous Source Current ISM Pulsed Source Current3 VSD d Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current ISD = 20A , VGS=0V ISD=25A, dlSD/dt=100A/µs 0.8 18 A 35 A 1.3 V 27 ns 33 nC Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev1.1 Mar.2022 WSD6036DN N-Ch MOSFET Typical Operating Characteristics Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characteristics Figure 5: Gate Charge Characteristics www.winsok.tw Figure 6: Capacitance Characteristics Page 3 Rev1.1 Mar.2022 WSD6036DN N-Ch MOSFET Typical Operating Characteristics Figure 7: Normalized Breakdown Voltage vs Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature Figure 9: Maximum Safe Operating Area Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambien www.winsok.tw Page 4 Rev1.1 Mar.2022 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.