ASDM80N80KQ-R

ASDM80N80KQ 80V N-Channel MOSFET Product Summary Features ● High ruggedness ● Low RDS(ON) ● Low Gate Charge ● Improved dv/dt Capability V DS 80 V R DS(on),Typ@ VGS=10 V 8.4 mΩ ID 80 A ● 100% Avalanche Tested Application ● Synchronous Rectification, ● Li Battery Protect Board, Inverter Schematic diagram TO-252-2L top view Absolute maximum ratings Symbol VDSS Parameter Value Unit Drain to source voltage 80 V Continuous drain current (@TC=25oC) 80 A Continuous drain current (@TC=100oC) 62* A 320 A ± 20 V ID IDM Drain current pulsed (note 1) VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 240 mJ EAR Repetitive avalanche energy (note 1) 20 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns 138.9 W 1.1 W/oC -55 ~ + 150 oC Value Unit Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature Thermal characteristics Symbol Parameter R0JA Thermal resistance, Junction to Ambient 62 oC/W R0JC Thermal resistance, Junction to case 2.2 oC/W NOV 2020 Version1.0 1/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ BVDSS Breakdown voltage temperature coefficient 80 ID=250uA, referenced to 25oC IDSS Drain to source leakage current V V/oC 0.06 VDS=80V, VGS=0V 1 uA VDS=64V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 2.9 4 V 8.4 9.9 mΩ IGSS On characteristics VGS(TH) Gate threshold voltage RDS(ON) Drain to source on state resistance Gfs VDS=VGS, ID=250uA 2 VGS=10V, ID=40A,TJ=25oC =125oC VGS=10V, ID=40A,TJ Forward transconductance VDS=5V, ID=40A 13.3 mΩ 55 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 3988 VGS=0V, VDS=40V, f=1MHz 213 pF 197 24 VDS=40V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 67 ns 96 Fall time 39 Qg Total gate charge Qgs Gate-source charge Qgd Rg 92 Gate-drain charge VDS=64V, VGS=10V, ID=30A , IG=3mA (note 4,5) 34 Gate resistance VDS=0V, Scan F mode 5 23 nC Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 80 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 320 A Diode forward voltage drop. IS=45A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us 39 ns 60 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =31A, VDD=40V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. NOV 2020 Version1.0 2/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature NOV 2020 Version1.0 3/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET Fig. 8. Capacitance Characteristics Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area Fig. 10. Maximum drain current vs. case temperature Fig. 11. Transient thermal response curve NOV 2020 Version1.0 4/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET Fig. 12. Gate charge test circuit & waveform Fig. 13. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform NOV 2020 Version1.0 5/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period NOV 2020 Version1.0 VF VDD Body diode forward voltage drop 6/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM80N80KQ-R 80N80 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE 80N80 TO-252 NOV 2020 Version1.0 7/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET TO-252 NOV 2020 Version1.0 8/9 Ascend Semicondutor Co.,Ltd ASDM80N80KQ 80V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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