ASDM60N80KQ-R

ASDM60N80KQ 60V N-Channel MOSFET Product Summary General Features ● High density cell design for ultra low Rdson 60 V R DS(on),Typ@ VGS=10 V 6.0 mΩ ID 80 A ● Fully characterized avalanche voltage and current V DS ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● PWM ● Load Switching Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS 60 V Gate-Source Voltage VGS ±20 V ID 80 A ID (100 )℃ 52 A Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 108 W 0.73 W/℃ 130 mJ Derating factor Single pulse avalanche energy (Note 5) EAS TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) NOV 2018 Version1.0 RθJC 1/8 1.4 ℃/W Ascend Semicondutor Co.,Ltd ASDM60N80KQ 60V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 - - V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA VDS=VGS, ID=250μA 2 3 4 V VGS=10V, ID=30A - 6.0 7.9 mΩ - 3360 - pF - 232 - pF - 209 - pF - 90 - nC - 9 - nC - 18 - nC - 9 - ns - 7 - ns - 40 - ns - 15 - ns On Characteristics VGS(th) Gate Threshold Voltage RDS(on) note3 Static Drain-Source on-Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=30V, VGS=0V, f=1.0MHz VDS=30V, ID=30A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS=30V, ID=30A, RG=1.8Ω, VGS=10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 80 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 320 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 33 - ns - 46 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=30A IF=30A, dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω,IAS=22.8A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% NOV 2018 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM60N80KQ 60V N-Channel MOSFET Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics ID (A) 40 10V ID (A) 30 4.5V 4V 25 30 20 TJ=125℃ 15 20 VGS=3V 25℃ 10 10 5 VDS (V) 0 0 0.5 1.0 1.5 2.0 0 2.5 1.5 3.0 4.5 6.0 7.5 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current IS(A) RDS(ON) (mΩ) 8 VGS(V) 0 1.0E+01 1.0E+00 6 VGS=10V 1.0E-01 125℃ 4 TJ=25℃ 1.0E-02 1.0E-03 2 1.0E-04 ID(A) 0 0 10 20 30 40 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 10 0.2 VSD(V) 0.6 0.8 1.0 Figure 6: Capacitance Characteristics VGS(V) 8 VDS =30V ID=30A 104 Ciss 6 4 103 2 0 0.4 C rss Qg(nC) 0 Coss 18 NOV 2018 Version1.0 36 VDS(V) 2 10 54 72 90 0 3/8 10 20 30 40 50 Ascend Semicondutor Co.,Ltd ASDM60N80KQ 60V N-Channel MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on) VBR(DSS) 2.5 1.3 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 90 1000 ID(A) 75 10μs 100 10 60 100μs 1ms Limited by RDS(on) 45 10ms 100ms 30 DC TC=25℃ Single pulse 1 0.1 0.1 15 VDS (V) 10 1 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 10-1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 10-4 NOV 2018 Version1.0 10-3 TP(s) 10-2 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC 10-1 100 101 4/8 Ascend Semicondutor Co.,Ltd ASDM60N80KQ 60V N-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms NOV 2018 Version1.0 5/8 Ascend Semicondutor Co.,Ltd ASDM60N80KQ 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM60N80KQ-R 60N80 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE 60N80 TO-252 NOV 2018 Version1.0 6/8 Ascend Semicondutor Co.,Ltd ASDM60N80KQ 60V N-Channel MOSFET TO-252 NOV 2018 Version1.0 7/8 Ascend Semicondutor Co.,Ltd ASDM60N80KQ 60V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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