HYG053N10NS1P/B
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
100V/120A
RDS(ON)=4.8 mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen-Free Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
Applications
Switching application
Power management for inverter systems
Battery management
N-Channel MOSFET
Ordering and Marking Information
Package Code
P
B
G053N10
G053N10
XYMXXXXXX
XYMXXXXXX
P :TO-220FB-3L
B:TO-263-2L
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
HYG053N10NS1P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
TJ
Junction Temperature Range
-55 to 175
°C
TSTG
Storage Temperature Range
-55 to 175
°C
Tc=25°C
120
A
Tc=25°C
360
A
Tc=25°C
120
A
Tc=100°C
84.8
A
Tc=25°C
187.5
W
Tc=100°C
93.7
W
IS
Source Current-Continuous(Body Diode)
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Note:
Maximum Power Dissipation
RθJC
Thermal Resistance, Junction-to-Case
0.8
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient **
62.5
°C/W
EAS
SinglePulsed-Avalanche Energy ***
360
mJ
L=0.3mH
* Repetitive rating;pulse width limited by max.junction temperature.
** Surface mounted on 1in2 FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG053N10NS1
Unit
Min
Typ.
Max
VGS=0V,IDS= 250μA
100
-
-
V
VDS=100V,VGS=0V
-
-
1
μA
-
-
50
μA
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
VGS(th)
IGSS
RDS(ON)
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS= 250μA
2
3
4
V
Gate-Source Leakage Current
VGS=±20V,VDS=0V
-
-
±100
nA
Drain-Source On-State Resistance
VGS= 10V,IDS=50A
-
4.8
5.5
mΩ
ISD=50A,VGS=0V
-
0.9
1.2
V
-
60
-
ns
-
106
-
nC
Diode Characteristics
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=50A,dISD/dt=100A/μs
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HYG053N10NS1P/B
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG053N10NS1
Min
Typ.
Max
Unit
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
3.4
-
Ciss
Input Capacitance
VGS=0V,
-
4036
-
Coss
Output Capacitance
VDS= 25V,
-
1410
-
Crss
Reverse Transfer Capacitance
Frequency=1.0MHz
-
76
-
td(ON)
Turn-on Delay Time
-
19
-
Tr
Turn-on Rise Time
VDD= 50V,RG=4.0Ω,
-
93
-
td(OFF)
Turn-off Delay Time
IDS= 50A,VGS= 10V
-
52
-
-
86
-
-
70
-
-
24
-
-
20
-
Tf
Turn-off Fall Time
Gate Charge
Ω
pF
ns
Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS =80V, VGS=10V,IDs=50A
nC
Note: *Pulse test,pulse width ≤ 300us,duty cycle ≤ 2%
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3
HYG053N10NS1P/B
Typical Operating Characteristics
Figure 2: Drain Current
ID-Drain Current(A)
Power Dissipation (w)
0Figure 1: Power Dissipation
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Thermal
Zθjc
ID-Drain Current(A)
Impedance
Figure 4: Thermal Transient Impedance
Normalized Transient
Figure 3: Safe Operation Area
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
ID-Drain Current(A)
RDS(ON)-ON-Resistance(mΩ)
VDS-Drain-Source Voltage(V)
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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V1.0
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HYG053N10NS1P/B
Typical Operating Characteristics(Cont.)
Figure 8: Source-Drain Diode Forward
IS-Source Current (A)
Normalized On-Resistance
Figure 7: On-Resistance vs. Temperature
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
C-Capacitance(pF)
VGS-Gate-Source Voltage (V)
12
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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V1.0
5
HYG053N10NS1P/B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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V1.0
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HYG053N10NS1P/B
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
TO-263-2L
TO-263-2L
Tube
Tube
Reel
50
50
800
Package Information
TO-220FB-3L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.25
1.30
1.45
A2
2.20
2.40
2.60
b
0.70
0.80
0.95
b2
1.17
1.27
1.47
c
0.40
0.50
0.65
D
15.10
15.60
16.10
D1
8.80
9.10
9.40
D2
5.50
-
-
E
9.70
10.00
10.30
E3
7.00
-
-
e
2.54 BSC
e1
5.08 BSC
H1
6.25
6.50
6.85
L
12.75
13.50
13.80
L1
-
3.10
3.40
ΦP
3.40
3.60
3.80
Q
2.60
2.80
3.00
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V1.0
7
HYG053N10NS1P/B
Package Information
TO-263-2L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.22
1.27
1.42
A2
2.49
2.69
2.89
A3
0
0.13
0.25
b
0.7
0.81
0.96
b1
1.17
1.27
1.47
c
0.3
0.38
0.53
D1
8.5
8.7
8.9
D4
6.6
-
-
E
9.86
10.16
10.36
E5
7.06
-
-
e
2.54 BSC
H
14.7
15.1
15.5
H2
1.07
1.27
1.47
L
2
2.3
2.6
L1
1.4
1.55
1.7
L4
θ
0.25 BSC
0°
5°
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9°
V1.0
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HYG053N10NS1P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmaxto TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax)
Time 25°C to peak temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
60-120 seconds
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
217 °C
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
20** seconds
30** seconds
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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HYG053N10NS1P/B
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mm³
Volume mm³
Thickness
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