ATM3401PSA

ATM3401PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: -30V Drain Current: -4.2A Features  Trench FET Power MOSFET  Exceptional on-resistance and maximum DC current capability  RDS(ON) < 65mΩ (VGS = -10V)  RDS(ON) < 75mΩ (VGS =- 4.5V)  RDS(ON) < 90mΩ (VGS = -2.5V) Marking:R1 Application  DC/DC Converter  Load Switch for Portable Devices  Battery Switch Absolute maximum ratings (Ta=25℃ Parameter unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 1.2 W RθJA 104 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/5 Dated:10/2022 Rev: 2.2 ATM3401PSA Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =-250µA -0.9 -1.3 V VGS =-10V, ID =-4.2A 50 65 VGS =-4.5V, ID =-4A 60 75 VGS =-2.5V, ID =-1A 70 90 VDS =-5V, ID =-4.2A 10 Gate threshold voltage Drain-source on-resistance1) RDS(on) Forward transconductance1) gFS -0.7 mΩ S Dynamic characteristics2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 954 VDS =-15V,VGS =0V,f =1MHz 115 pF 77 Switching characteristics2) Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time 6.3 VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω 3.2 38.2 ns tf 12 IS -2 A Diode pulsed forward current ISM -25 A Diode Forward voltage VDS -1.2 V Source-Drain Diode characteristics Diode forward current 1) VGS =0V, IS=-4.2A Notes: 1) Pulse test: pulse width≤300μs, duty cycle≤2%. 2) Guaranteed by design, not subject to production testing. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/5 Dated:10/2022 Rev: 2.2 ATM3401PSA Typical Characteristics Curves AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/5 Dated:10/2022 Rev: 2.2 ATM3401PSA Package Outline SOT-23 Symbol A A1 A2 b c D E E1 e e1 L L1 Dimensions In Millimeters Min. 0.90 0.00 0.90 0.30 0.08 2.80 1.20 2.25 0.95 REF. 1.80 Max. 1.15 0.10 1.05 0.50 0.15 3.00 1.40 2.55 2.00 0.55 REF. 0.30 0.50 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/5 Dated:10/2022 Rev: 2.2 ATM3401PSA Package Specifications AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/5 Dated:10/2022 Rev: 2.2