HY3906P/B
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
60V/190A
RDS(ON) = 3.2 m(typ.) @ VGS=10V
•
100% avalanche tested
•
Reliable and Rugged
•
Lead Free and Green Devices Available
G
G
(RoHS Compliant)
D
TO-220FB-3L
D
S
S
TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and Marking Information
Package Code
P
HY3906
B
HY3906
YYXXXJWW G
YYXXXJWW G
P : TO-220FB-3L
Date Code
YYXXX WW
B : TO-263-2L
Assembly Material
G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
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1
V1.0
HY3906P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
190
A
TC=25°C
720**
A
TC=25°C
190
TC=100°C
128
TC=25°C
220
TC=100°C
110
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RJC
Thermal Resistance-Junction to Case
0.68
RJA
Thermal Resistance-Junction to Ambient
62.5
A
W
°C/W
Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
L=0.5mH
J
1.3***
Note: * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=48V
Electrical Characteristics
Symbol
Parameter
(TC = 25C Unless Otherwise Noted)
Test Conditions
HY3906
Min.
Typ.
Max.
60
-
-
-
-
1
-
-
10
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)*
VGS=0V, IDS=250A
VDS=60V, VGS=0V
TJ=85°C
V
A
Gate Threshold Voltage
VDS=VGS, IDS=250A
2.0
3.0
4.0
V
Gate Leakage Current
VGS=±25V, VDS=0V
-
-
±100
nA
Drain-Source On-state Resistance
VGS=10V, IDS=95A
-
3.2
4.0
m
ISD=95A, VGS=0V
-
0.8
1.2
V
-
48
-
ns
-
72
-
nC
Diode Characteristics
VSD *
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
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ISD=95A, dlSD/dt=100A/s
2
V1.0
HY3906P/B
Electrical Characteristics (Cont.)
Symbol
Parameter
(TC = 25C Unless Otherwise Noted)
Test Conditions
HY3906
Min.
Typ.
Max.
-
1.9
-
-
5726
-
-
1014
-
-
506
-
-
28
-
-
18
-
-
42
-
-
54
-
-
135
-
-
24
-
-
49
-
Unit
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=30V, R G=6 ,
I DS =95A, VGS=10V,
Turn-off Fall Time
pF
ns
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=48V, VGS=10V,
IDS=95A
nC
Note * : Pulse test ; pulse width 300s, duty cycle2%.
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3
V1.0
HY3906P/B
Typical Operating Characteristics
Drain Current
Power Dissipation
225
ID - Drain Current (A)
Ptot - Power (W)
350
300
250
200
150
200
limited by package
175
150
125
100
75
100
50
25
50
o
o
TC=25 C
0
0
20
40
0
60
TC=25 C,VG=10V
0
20
40
60 80 100 120 140 160 180 200
80 100 120 140 160 180 200
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Safe Operation Area
it
im
100us
on
)L
100
1ms
Rd
s(
ID - Drain Current (A)
1000
10ms
10
DC
1
o
TC=25 C
0.1
0.01
0.1
1
10
100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
10
Normalized Effective Transient
Duty = 0.5
0.2
1
0.1
0.05
0.1
0.02
0.01
0.01
Single
Mounted on minimum pad
o
RJA : 62.5 C/W
0.001
0.0001
0.001
0.1
0.01
1
10
Square Wave Pulse Duration (sec)
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4
V1.0
HY3906P/B
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
5.5
400
VGS= 5.5,6,7,8,9,10V
RDS(ON) - On - Resistance (mΩ)
350
ID - Drain Current (A)
300
5V
250
200
150
100
4.5V
50
0
0.0
4V
1.0
2.0
3.0
4.0
5.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
6.0
VGS=10V
0
50
VDS - Drain - Source Voltage (V)
100
150
Gate-Source On Resistance
Gate Threshold Voltage
1.6
IDS =250μA
IDS= 95A
12
1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
250
ID - Drain Current (A)
14
10
8
6
4
2
0
200
3
4
5
6
7
8
9
1.0
0.8
0.6
0.4
0.2
-50 -25
10
VGS - Gate - Source Voltage (V)
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1.2
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
V1.0
HY3906P/B
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
2.0
100
IDS = 95A
1.8
1.6
o
IS - Source Current (A)
Normalized On Resistance
200
VGS = 10V
1.4
1.2
1.0
0.8
Tj=150 C
10
o
Tj=25 C
1
0.6
o
RON@Tj=25 C: 3.4mΩ
0.4
-50 -25
0
25
50
75
0.1
0.0
100 125 150
1.0
1.2
Gate Charge
VGS - Gate-source Voltage (V)
Ciss
5000
4000
3000
2000
1.4
10
VDS= 48V
9
6000
C - Capacitance (pF)
0.8
Capacitance
Frequency=1MHz
Coss
Crss
0
0.6
VSD - Source - Drain Voltage (V)
7000
0
0.4
Tj - Junction Temperature (°C)
8000
1000
0.2
IDS= 95A
8
7
6
5
4
3
2
1
8
16
24
32
0
40
VDS - Drain - Source Voltage (V)
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0
30
60
90
120
150
QG - Gate Charge (nC)
6
V1.0
HY3906P/B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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7
V1.0
HY3906P/B
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
SYMBOL
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MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.25
1.30
1.45
A2
2.20
2.40
2.60
b
0.70
0.80
0.95
b2
1.17
1.27
1.47
c
0.40
0.50
0.65
D
15.10
15.60
16.10
D1
8.80
9.10
9.40
D2
5.50
-
-
E
9.70
10.00
10.30
E3
7.00
-
-
e
2.54 BSC
e1
5.08 BSC
H1
6.25
6.50
6.85
L
12.75
13.50
13.80
L1
-
3.10
3.40
ΦP
3.40
3.60
3.80
Q
2.60
2.80
3.00
8
V1.0
HY3906P/B
Device Per Unit
Package Type
Unit
Quantity
TO-263-2L
Reel
50
Package Information
TO-263-2L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.22
1.27
1.42
A2
2.49
2.69
2.89
A3
0
0.13
0.25
b
0.7
0.81
0.96
b1
1.17
1.27
1.47
c
0.3
0.38
0.53
D1
8.5
8.7
8.9
D4
6.6
-
-
E
9.86
10.16
10.36
E5
7.06
-
-
e
2.54 BSC
H
14.7
15.1
15.5
H2
1.07
1.27
1.47
L
2
2.3
2.6
L1
1.4
1.55
1.7
L4
θ
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0.25 BSC
0°
5°
9
9°
V1.0
HY3906P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
3 C/second max.
3C/second max.
183 C
60-150 seconds
217 C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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10
V1.0
HY3906P/B
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3
Package
Thickness
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