HSW6800

HSW6800 Dual N-CH Fast Switching MOSFETs Description Product Summary The HSW6800 is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSW6800 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ VDS 30 V RDS(ON),max 45 mΩ ID 4 A SOT23-6L Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 4 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 3 A IDM Pulsed Drain Current2 16 A PD@TA=25℃ Total Power Dissipation3 1.4 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient 1 www.hs-semi.cn Ver2.0 Typ. --- Max. Unit 90 ℃/W 1 HSW6800 Dual N-CH Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.029 --- V/℃ VGS=4.5V , ID=4A --- 32 45 VGS=2.5V , ID=3A --- 45 60 0.6 0.9 1.3 V --- -2.82 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 5 --- S Qg Total Gate Charge (4.5V) --- 9.5 --- Qgs Gate-Source Charge --- 1.6 --- Qgd Gate-Drain Charge --- 3 --- Td(on) VDS=15V , VGS=4.5V , ID=4A --- 3.2 --- Rise Time VDD=15V , VGS=4.5V , RG=3.3 --- 4.9 --- Turn-Off Delay Time ID=3A --- 22 --- Fall Time --- 4 --- Ciss Input Capacitance --- 880 --- Coss Output Capacitance --- 99 --- Crss Reverse Transfer Capacitance --- 73 --- Min. Typ. Max. Unit --- --- 4 A --- --- 16 A --- --- 1.2 V Tr Td(off) Tf Turn-On Delay Time nC VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver2.0 2 HSW6800 Dual N-CH Fast Switching MOSFETs Typical Characteristics 55 16 ID=3A VGS=5V 14 50 VGS=3V VGS=2.5V 10 RDSON (mΩ) ID Drain Current (A) VGS=4.5V 12 45 8 40 6 VGS=1.8V 4 35 2 30 0 0 0.2 0.4 0.6 0.8 VDS , Drain-to-Source Voltage (V) 0 1 2.5 Fig.1 Typical Output Characteristics 7.5 10 Fig.2 On-Resistance vs. Gate-Source Voltage 6 IS Source Current(A) 5 VGS (V) 4 TJ=150℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 1.2 Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse diode 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver2.0 3 HSW6800 Dual N-CH Fast Switching MOSFETs 1000 100.00 Ciss 100us 10ms ID (A) Capacitance (pF) 10.00 100 100ms 1.00 Coss 1s Crss 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 1 4 7 10 13 16 19 0.01 22 0.1 VDS , Drain to Source Voltage (V) 1 Fig.7 Capacitance VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver2.0 4 HSW6800 Dual N-CH Fast Switching MOSFETs SOT23-6L Package Outline Dimensions www.hs-semi.cn Ver2.0 5