HSW8810

HSW8810 Dual N-Ch Fast Switching MOSFETs Description Product Summary The HSW8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion battery pack applications. The HSW8810 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge ESD Protection Excellent Cdv/dt effect decline Advanced high cell density Trench technology VDS 20 V RDS(ON),max 20 mΩ ID 6 A SOT23-6L Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current1 6 A ID@TA=70℃ Continuous Drain Current1 4.8 A IDM Pulsed Drain Current2 24 A PD@TA=25℃ Total Power Dissipation3 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient 1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 100 ℃/W 1 HSW8810 Dual N-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V VGS=4.5V , ID=3A 15 16.5 20 VGS=4.0V , ID=3A 15.5 17 20.5 VGS=3.7V , ID=3A 16 17.5 21 VGS=3.1V , ID=3A 17 18.5 23 VGS=2.5V , ID=3A 18.5 21 26 VGS=VDS , ID =250uA 0.5 0.7 1.2 VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 m V IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±10 uA gfs Forward Transconductance VDS=5V , ID=3A --- 17 --- S Qg Total Gate Charge --- 10.4 --- --- 1.3 --- VDS=15V , VGS=4.5V , ID=6A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 2.6 --- Turn-On Delay Time --- 3.2 --- Td(on) uA nC Rise Time VDD=10V , VGS=4.5V , RG=3.3 --- 9.8 --- Turn-Off Delay Time ID=3A --- 31 --- Fall Time --- 3.6 --- Ciss Input Capacitance --- 630 --- Coss Output Capacitance --- 66 --- Crss Reverse Transfer Capacitance --- 63 --- Min. Typ. Max. Unit Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 5.5 A Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- 0.78 1.2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper, t ≤10s. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSW8810 Dual N-Ch Fast Switching MOSFETs N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics diode Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSW8810 Dual N-Ch Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSW8810 Dual N-Ch Fast Switching MOSFETs SOT23-6L Package Outline Dimensions www.hs-semi.cn Ver 2.0 5