HSW6811

HSW6811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSW6811 is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSW6811 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology VDS -20 V RDS(ON),typ 115 mΩ ID -2 A SOT23-6L Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -2 A ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 -1.4 A IDM Pulsed Drain Current2 -8 A PD@TA=25℃ Total Power Dissipation3 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA RθJC www.hs-semi.cn Typ. Max. Unit Thermal Resistance Junction-ambient 1 --- 125 ℃/W Thermal Resistance Junction-Case1 --- 80 ℃/W Ver 2.0 1 HSW6811 Dual P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V VGS=-4.5V , ID=-2A --- 115 130 VGS=-2.5V , ID=-1A --- 150 180 VGS=VDS , ID =-250uA -0.5 -0.65 -1.0 VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 m V uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-1A --- 5 --- S Qg Total Gate Charge (-4.5V) --- 4.3 --- Qgs Gate-Source Charge --- 0.8 --- Qgd Gate-Drain Charge --- 1 --- VDS=-10V , VGS=-4.5V , ID=-2A nC --- 12 --- Rise Time VDD=-10V , VGS=-4.5V , RG=1 --- 20 --- Turn-Off Delay Time ID=-2A --- 24 --- Fall Time --- 9 --- Ciss Input Capacitance --- 280 --- Coss Output Capacitance --- 54 --- Crss Reverse Transfer Capacitance --- 44 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -2 A Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSW6811 Dual P-Ch 20V Fast Switching MOSFETs Typical Characteristics 12 VGS=-5V VGS=-4.5V -ID Drain Current (A) 10 VGS=-3V 8 VGS=-2.5V 6 VGS=-1.8V 4 2 0 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 -IS Source Current(A) 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.4 0.8 1.2 -VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) 0 50 100 150 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn -50 Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSW6811 Dual P-Ch 20V Fast Switching MOSFETs 1000 100.00 Ciss 100us -ID (A) Capacitance (pF) 10.00 Coss 100 10ms 1.00 100ms Crss 1s 0.10 TA=25℃ Single Pulse F=1.0MHz 10 DC 0.01 1 5 9 13 17 -VDS , Drain to Source Voltage (V) 21 0.1 1 Fig.7 Capacitance 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSW6811 Dual P-Ch 20V Fast Switching MOSFETs SOT23-6L Package Outline Dimensions www.hs-semi.cn Ver 2.0 5