KYL3407

ShenZhen HanKingYuan Electronic Co.,Ltd KYL3407 -30V P-Channel Mosfet SOT-23-3L FEATURES ● RDS(ON) ≤ 60mΩ( 45mΩ Typ.) @VGS=-10V ● RDS(ON) ≤ 100mΩ( 70mΩ Typ.) @VGS=-4.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS ● Load Switch ● DC/DC Converter P-CHANNEL MOSFET MARKING 3407 3407 Device Code Absolute maximum ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -3.8 A IDM Maximum Pulsed Drain to Source Diode Forward Current -18 A PD Power Dissipation 1.25 W Thermal Resistance from Junction to Ambient 100 ℃/W TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55~ +150 ℃ RθJA www.scr-ky.com 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3407 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = -250μA -30 - - V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V, TJ = 85℃ - - -30 μA IGSS Gate to Body Leakage Current VGS = ±20V,VDS = 0V - - ±100 nA VDS =VGS,ID = -250μA -1 - -2 V VGS =-10V, ID =-3A - 45 60 mΩ VGS =-4.5V, ID =-2A - 70 100 mΩ VGS = VDS = 0 V, f = 1 MHz - - 10 Ω - 619 - pF - 83 - pF 65 - pF - 13.2 - nC - 2.4 - nC - 2 - nC - 2.6 - ns - 7.8 - ns - 42 - ns - 5.5 - ns - -0.8 -1.3 V - 7.2 - ns - 2.3 - nC On Characteristics VGS(th) RDS(on) RG Gate Threshold Voltage Static Drain-Source On-Resistance note1 Gate Resistance Dynamic Characteristics note2 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge Switching Characteristics VDS=-15V, ID=-3A VGS=-10V note2 td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDS =-15V, VGS = 0V f = 1.0MHz Turn-Off Fall Time VGS = -10V, VDS=-15V RG =6Ω, ID=-3A RL=5Ω Drain-Source Diode Characteristics and Maximum Ratings Drain to Source Diode Forward Voltage VGS = 0V, ISD=-1A TJ = 25℃ trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS =-3A di/dt =100A/μs VSD Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 2 . Guaranteed by design, not subject to production testing www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3407 TYPICAL PERFORMANCE CHARACTERISTICS Power Capability 1.0 Current Capability 3.5 3.0 -ID - Drain Current (A) Ptot - Power (W) 0.8 0.6 0.4 0.2 2.5 2.0 1.5 1.0 0.5 o o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 Tmp – Mounting Point Temp. (°C) -ID - Drain Current (A) Rd s(o n) Lim it 100us 300us 1ms 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.01 0.1 1 10 100 300 Normalized Transient Thermal Resistance 10 1 -VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) -6 -3V -2 0 0.0 -2V -0.5 -1.0 -1.5 -2.0 -2.5 -VDS - Drain-Source Voltage (V) www.scr-ky.com 60 80 100 120 140 160 2 Transient Thermal Impedance 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 Mounted on 1in pad o RθJA : 150 C/W 1E-3 0.01 0.1 1 10 30 On Resistance 90 -8 -4 40 100 VGS= -4,-5,-6,-7,-8,-9,-10V -10 20 Square Wave Pulse Duration (sec) Output Characteristics -12 0 Tmp – Mounting Point Temp. (°C) Safe Operation Area 20 TA=25 C,VG= -10V -3.0 80 VGS= - 4.5V 70 60 50 VGS= -10V 40 30 20 0 -2 -4 -6 -8 -ID - Drain Current (A) -10 -12 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3407 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) Transfer Characteristics 200 ID= -3.0A 180 Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) 140 120 100 80 60 40 20 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 -VGS - Gate-Source Voltage (V) 50 75 100 125 150 IDS = - 3A 10 1.6 -IS - Source Current (A) Normalized On Resistance 25 Diode Forward Current 20 VGS = -10V 1.8 0 Tj - Junction Temperature (°C) Normalized On Resistance 2.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 RON@Tj=25 C: 45mΩ 0 25 50 Capacitance 1000 -VGS - Gate-Source Voltage (V) 800 Ciss 700 600 500 400 300 200 Coss 100 0 5 10 0.2 0.4 0.6 0.8 1.0 1.2 -VSD - Source-Drain Voltage (V) 1.4 Gate Charge 10 VDS= -15V Frequency=1MHz 900 www.scr-ky.com o Tj=25 C 1 0.1 0.0 75 100 125 150 Tj - Junction Temperature (°C) 0 o Tj=150 C o 0.0 -50 -25 C - Capacitance (pF) IDS = - 250μA 1.6 160 0 Normalized Threshold Voltage 1.8 ID= - 3A 8 6 4 2 Crss 15 20 25 -VDS - Drain-Source Voltage (V) 30 0 0 3 6 9 QG - Gate Charge (nC) 12 15 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3407 SOT-23-3L PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 e e1 0.950 TYP. 1.800 L L1 θ www.scr-ky.com 2.000 0.071 0.700 REF. 0.300 0° 0.116 0.037 TYP. 0.079 0.028 REF. 0.600 8° 0.012 0° 0.024 8° 5／5