KYL3400

ShenZhen HanKingYuan Electronic Co.,Ltd KYL3400 30V N-Channel Mosfet SOT-23-3L FEATURES ● RDS(ON) ≤ 26mΩ( 19mΩ Typ.) @VGS=10V ● RDS(ON) ≤ 32mΩ( 23mΩ Typ.) @VGS=4.5V 1. GATE ● RDS(ON) ≤ 50mΩ( 30mΩ Typ.) @VGS=2.5V 3. DRAIN 2. SOURCE APPLICATIONS ● Load Switch ● PWM Application ● Power management N-CHANNEL MOSFET MARKING 3400:Device Code MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage V A A ID Continuous Drain Current IDM Pulsed Drain Current note1 ±12 5.8 3.8 23.2 Power Dissipation 1.36 W 92 ℃/W -55 ~+150 ℃ PD RθJA TJ,TSTG Ta= 25℃ Ta= 100℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range www.scr-ky.com A 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3400 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±12V - - ±100 nA VDS=VGS, ID=250μA 0.5 0.9 1.4 V VGS=10V, ID=4.2A - 19 26 VGS=4.5V, ID=4A - 23 32 VGS=2.5V, ID=1A - 30 50 - 535 - pF - 130 - pF - 36 - pF - 4.8 - nC - 1.2 - nC - 1.7 - nC - 12 - ns - 52 - ns - 17 - ns - 10 - ns On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source on-Resistance note2 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=15V, VGS=0V, f=1.0MHz VDS=15V, I=4.2A, VGS=4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, ID=4A, RGEN=3Ω, VGS =4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 5.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 23.2 A VSD Drain to Source Diode Forward Voltage - - 1.2 V VGS=0V, IS=5.8A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3400 TYPICAL PERFORMANCE CHARACTERISTICS Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics ID (A) 25 10V ID (A) 25 4.5V 20 20 3V 2.5V 15 15 125℃ 10 10 2V 25℃ 5 5 V DS(V) 0 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 IS(A) RDS(ON) (mΩ) 103 35 VGS=2.5V 30 102 TJ=125℃ V GS =4.5V 25 20 TJ=25℃ 101 VGS=10V 15 10 3.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 40 V GS(V) 0 V GS=0V ID(A) 0 2 4 6 8 100 0.2 Figure 5: Gate Charge Characteristics 5 4 0.4 0.6 0.8 V SD(V) 1.0 1.2 1.4 1.6 1.8 Figure 6: Capacitance Characteristics VGS(V) 1400 V DS=15V ID=4.2A C(pF) 1200 1000 3 800 Ciss 600 2 400 1 0 0 Coss 200 Qg(nC) 1 www.scr-ky.com 2 Crss VDS(V) 0 3 4 5 0 5 10 15 20 25 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3400 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature VBR(DSS) 2.5 1.3 1.2 RDS(on) 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 102 ID(A) 6 5 1μs 101 4 10μs 100μs 100 Limited by RDS(on) 10-1 10 0.5 -100 2 10ms TC=25℃ Single pulse 1 DC VDS (V) 1 -2 0.01 3 1ms 0.1 10 100 0 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 103 ZthJ-A (℃/W) 101 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 100 10-1 -6 10 10-5 10-4 www.scr-ky.com 10-3 TP(s) 10-2 PDM 102 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM*ZthJA+TA 10-1 100 101 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KYL3400 SOT-23-3L PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.400 0.012 0.016 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 e e1 0.950 TYP. 1.800 L L1 θ www.scr-ky.com 2.000 0.071 0.700 REF. 0.300 0° 0.116 0.037 TYP. 0.079 0.028 REF. 0.600 8° 0.012 0° 0.024 8° 5／5