AOD4130-HXY

HXY AOD4130-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description The AOD4130-HXY uses advanced trench technology to provide excellent RDS(ON), low gate charge and D operation with gate voltages as low as 4.5V. This S device is suitable for use as a G Battery protection or in other Switching application. TO252-2L General Features VDS = 60V ID =30 A PIN2 D ! RDS(ON) < 26mΩ @ VGS=10V " PIN1 G ! Application ! " " " ! PIN3 S Battery protection N-Channel MOSFET Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AOD4130-HXY TO252-2L 30N06XXXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 30 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 15 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5.6 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.5 A IDM Pulsed Drain Current2 46 A EAS Single Pulse Avalanche Energy3 25.5 mJ IAS Avalanche Current 22.6 A PD@TC=25℃ Total Power Dissipation4 34.7 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY AOD4130-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 3.6 ℃/W Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.063 --- V/℃ VGS=10V , ID=15A --- 22 26 VGS=4.5V , ID=10A --- 30 38 1.2 --- 2.5 mΩ V mV/℃ Gate Threshold Voltage VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -5.24 --- VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 17 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Ω Qg Total Gate Charge (4.5V) --- 12.6 --- Qgs Gate-Source Charge --- 3.2 --- Qgd Gate-Drain Charge --- 6.3 --- Td(on) Turn-On Delay Time --- 8 --- --- 14.2 --- --- 24.4 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 1378 --- Coss Output Capacitance --- 86 --- Crss Reverse Transfer Capacitance --- 64 --- IS Continuous Source Current1,5 --- --- 23 A --- --- 46 A --- --- 1.2 V Tr Td(off) Tf Rise Time Turn-Off Delay Time ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VDS=48V , VGS=4.5V , ID=12A VDD=30V , VGS=10V , RG=3.3 , ID=10A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY AOD4130-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Characteristics 35 12 ID=12A VGS=10V VGS=7 33 VGS=5V 8 RDSON (mΩ) ID Drain Current (A) 10 VGS=4.5V VGS=3V 6 30 4 28 2 0 25 0 0.5 1 1.5 VDS , Drain-to-Source Voltage (V) 2 2 Fig.1 Typical Output Characteristics 4 6 8 VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 Voltage 10 ID=12A VGS Gate to Source Voltage (V) IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 8 6 4 2 0 0 1 VSD , Source-to-Drain Voltage (V) 5 10 15 20 25 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics diode 2.5 Normalized On Resistance 1.5 Normalized VGS(th) 2.0 1 1.5 0.5 1.0 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Shenzhen HuaXuanYang Electronics CO.,LTD 150 -50 0 50 100 150 T J , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ www.hxymos.com HXY AOD4130-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG 100.00 10000 F=1.0MHz 10us 100us Capacitance (pF) Ciss 10.00 1ms 1000 ID (A) 10ms 100ms 1.00 DC Coss 100 0.10 Crss TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 0.1 25 1 10 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD VGS Fig.11 Unclamped Inductive Waveform www.hxymos.com HXY AOD4130-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 L1 L2 2.900 TYP. 1.400 L3 0.409 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY AOD4130-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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