APT10045JFLL

APT10045JFLL 1000V 21A 0.450Ω POWER MOS 7 R FREDFET S S 27 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 2 T- D G D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT10045JFLL UNIT 1000 Volts Drain-Source Voltage 21 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 460 Watts Linear Derating Factor 3.68 W/°C VGSM PD TJ,TSTG 84 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 21 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1000 Volts 21 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A) TYP MAX 0.450 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor 3-2003 BVDSS Characteristic / Test Conditions 050-7038 Rev B Symbol APT10045JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions C iss Input Capacitance VGS = 0V Coss Output Capacitance VDS = 25V C rss Total Gate Charge Qgs 3 Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 23A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 500V Turn-off Delay Time tf ID = 23A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 639 VDD = 670V, VGS = 15V Eon nC 8 RG = 0.6Ω Eon UNIT pF 120 154 26 97 10 5 30 VGS = 10V Qgd MAX 4350 715 VDD = 500V Gate-Source Charge tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN ID = 23A, RG = 5Ω 380 INDUCTIVE SWITCHING @ 125°C 1046 VDD = 670V VGS = 15V ID = 23A, RG = 5Ω µJ 451 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM VSD dv/ MIN TYP MAX 23 Continuous Source Current (Body Diode) (Body Diode) 92 Diode Forward Voltage 2 (VGS = 0V, IS = -21A) 1.3 Volts 18 V/ns dv/ dt 5 Reverse Recovery Time (IS = -21A, di/dt = 100A/µs) Tj = 25°C 340 Tj = 125°C 640 Q rr Reverse Recovery Charge (IS = -21A, di/dt = 100A/µs) Tj = 25°C 1.78 Tj = 125°C 4.47 IRRM Peak Recovery Current (IS = -21A, di/dt = 100A/µs) Tj = 25°C 11.4 Tj = 125°C 16.4 t rr Amps Pulsed Source Current 1 Peak Diode Recovery dt UNIT ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 0.7 0.15 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7038 Rev B 3-2003 0.30 0.9 0.10 0.3 t2 0.1 0 t1 Duty Factor D = t1/t2 0.05 Peak TJ = PDM x ZθJC + TC 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 11.34mH, RG = 25Ω, Peak IL = 21A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 UNIT 10 Typical Performance Curves APT10045JFLL 60 0.0409 Power (Watts) 0.0246F 0.406F 0.225 148F 0.00361 Case temperature ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) 50 7V VGS =15 & 8V 40 6.5V 30 6V 20 5.5V 10 5V 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @