APT100GN60B2G

APT100GN60B2(G) 600V TYPICAL PERFORMANCE CURVES APT100GN60B2 APT100GN60B2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. ® ® T-Max G C E • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT100GN60B2(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current 8 @ TC = 25°C 229 I C2 Continuous Collector Current 8 @ TC = 110°C 135 I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 UNIT Volts Amps 300 300A @ 600V Switching Safe Operating Area @ TJ = 175°C 625 Total Power Dissipation Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 25 2 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.87 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 10-2005 MIN Rev A Characteristic / Test Conditions 050-7621 Symbol APT100GN60B2(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf 200 Gate Charge 9.5 VGE = 15V 600 VGE = µs VCC = 400V 65 55 RG = 1.0Ω 7 4750 TJ = +25°C 2675 Turn-on Delay Time Inductive Switching (125°C) 31 VCC = 400V 65 Current Rise Time Turn-off Delay Time VGE = 15V 350 RG = 1.0Ω 7 85 5000 I C = 100A Current Fall Time 44 Turn-on Switching Energy (Diode) µJ 5095 6 Turn-on Switching Energy ns 310 I C = 100A Eon2 nC 6 VGE = 15V Turn-on Switching Energy (Diode) V A 31 5 pF 300 Inductive Switching (25°C) 4 UNIT 340 7, VCC = 600V, VGE = 15V, Current Fall Time MAX 45 TJ = 125°C, R G = 4.3Ω 7 Turn-off Delay Time Turn-off Switching Energy 560 f = 1 MHz 15V, L = 100µH,VCE = 600V Current Rise Time Eon1 Eoff VGE = 0V, VCE = 25V TJ = 175°C, R G = 4.3Ω Turn-on Delay Time Turn-off Switching Energy 6000 I C = 100A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 55 TJ = +125°C ns 6255 66 µJ 3300 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .21 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7621 Rev A 10-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package pin temperature to 100A. APT Reserves the right to change, without notice, the specifications and information contained herein. Downloaded from Elcodis.com electronic components distributor TYPICAL PERFORMANCE CURVES = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 TJ = 175°C 200 TJ = 125°C 150 TJ = 25°C 100 TJ = -55°C 50 0 TJ = 25°C TJ = 125°C 200 150 100 50 TJ = 175°C 0 0 200 11V 150 10V 100 9V 50 8V 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250 TJ = -55°C 12V 250 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST