APT10M11JVRU3

APT10M11JVRU3 ISOTOP® Buck chopper MOSFET Power Module D Application  AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Features  Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged  ISOTOP® Package (SOT-227)  Very low stray inductance  High level of integration Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Very rugged  Low profile  RoHS Compliant ISOTOP Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS IFAV IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 90°C Max ratings 100 142 106 576 ±30 11 450 144 50 2500 30 47 Unit V A V m W A mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–8 APT10M11JVRU3 – Rev 2 October, 2012 Symbol VDSS APT10M11JVRU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 71A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V 2 Max 250 1000 11 4 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID = 50A @ TJ=25°C Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 8600 3200 1180 pF 300 nC 95 110 16 VGS = 15V VBus = 50V ID = 142A @ TJ=25°C RG = 0.6 48 ns 51 9 Chopper diode ratings and characteristics VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 200V VR = 200V VR = 200V IF=1A,VR=30V di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 21 IF = 30A VR = 133V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 3 6 33 150 31 335 19 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 133V di/dt =1000A/µs www.microsemi.com Min Typ 1.1 1.4 0.9 Unit V 250 500 94 Tj = 125°C Max 1.15 µA pF ns A nC ns nC A 2–8 APT10M11JVRU3 – Rev 2 October, 2012 Symbol APT10M11JVRU3 Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Min Typ MOSFET Diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.28 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g www.microsemi.com 3–8 APT10M11JVRU3 – Rev 2 October, 2012 Typical MOSFET Performance Curve www.microsemi.com 4–8 APT10M11JVRU3 – Rev 2 October, 2012 APT10M11JVRU3 APT10M11JVRU3 www.microsemi.com 5–8 APT10M11JVRU3 – Rev 2 October, 2012 Typical Diode Performance Curve www.microsemi.com 6–8 APT10M11JVRU3 – Rev 2 October, 2012 APT10M11JVRU3 APT10M11JVRU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Anode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Drain 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 7–8 APT10M11JVRU3 – Rev 2 October, 2012 * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. APT10M11JVRU3 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. 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The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 8–8 APT10M11JVRU3 – Rev 2 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. 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