APT10M19SVFRG

APT10M19BVFR APT10M19SVFR 100V 75A POWER MOS V® FREDFET 0.019Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 SVFR • Faster Switching • Avalanche Energy Rated • Lower Leakage • FAST RECOVERY BODY DIODE D G • TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10M19BVFR_SVFR UNIT 100 Volts Drain-Source Voltage 75 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 370 Watts Linear Derating Factor 2.96 W/°C PD TJ,TSTG 1 300 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 75 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 1500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 100 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 37.5A) TYP MAX UNIT Volts 0.019 Ohms Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 6-2004 Characteristic / Test Conditions 050-5606 Rev B Symbol APT10M19BVFR_SVFR DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 5100 6120 Coss Output Capacitance VDS = 25V 1900 2660 Reverse Transfer Capacitance f = 1 MHz 800 1200 3 VGS = 10V 200 300 Gate-Source Charge VDD = 50V 40 60 ID = 75A @ 25°C 92 140 VGS = 15V 16 32 VDD = 50V 40 80 ID = 75A @ 25°C 50 75 20 40 TYP MAX Crss Qg Total Gate Charge Qgs Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf RG = 1.6Ω Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol IS ISM MIN 75 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 300 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -75A) 1.3 Volts dv/ Peak Diode Recovery 5 V/ns dt dv/ dt 5 t rr Reverse Recovery Time (IS = -75A, di/dt = 100A/µs) Tj = 25°C 200 Tj = 125°C 350 Q rr Reverse Recovery Charge (IS = -75A, di/dt = 100A/µs) Tj = 25°C 0.5 Tj = 125°C 1.0 IRRM Peak Recovery Current (IS = -75A, di/dt = 100A/µs) Tj = 25°C 8 Tj = 125°C 12 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 TYP MAX 0.34 40 D=0.5 0.2 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5606 Rev B 6-2004 0.4 0.05 0.01 0.001 10-5 t1 t2 SINGLE PULSE 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 0.53mH, RG = 25Ω, Peak IL = 75A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID75A di/dt ≤ 700A/µs VR ≤100V TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10 Typical Performance Curves APT10M19BVFR_SVFR 200 VGS=9V, 10V & 15V 160 8V 120 7V 6.5V 80 6V 5.5V 40 5V ID, DRAIN CURRENT (AMPERES) VGS=15V 160 120 7V 6.5V 80 6V 5.5V 40 5V 4.5V 0 0 100 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @