APT1201R6SVFRG

APT1201R6BVFR APT1201R6SVFR 1200V POWER MOS V® FREDFET 8A 1.600Ω BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D3PAK SVFR • Faster Switching • Avalanche Energy Rated • Lower Leakage • FAST RECOVERY BODY DIODE D G • TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1201R6BVFR_SVFR UNIT 1200 Volts Drain-Source Voltage 8 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 280 Watts Linear Derating Factor 2.24 W/°C VGSM PD TJ,TSTG 32 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 8 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 Volts 8 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 4A) TYP MAX 1.600 Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor 6-2004 BVDSS Characteristic / Test Conditions 050-5849 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT1201R6BVFR_SVFR Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) TYP MAX VGS = 0V 3050 3660 VDS = 25V 255 360 f = 1 MHz 125 190 VGS = 10V 155 230 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 15 78 23 115 3 VGS = 15V 12 24 VDD = 0.5 VDSS 10 20 ID = ID [Cont.] @ 25°C 50 75 RG = 1.6Ω 15 30 TYP MAX Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf MIN Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 8 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt Peak Diode Recovery 32 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) dv/ 5 dt UNIT Amps 1.3 Volts 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 220 Tj = 125°C 450 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 1.0 Tj = 125°C 3.0 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 10 Tj = 125°C 14 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.45 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction UNIT °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 37.81mH, R = 25Ω, Peak I = 8A temperature. j G L 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ ID-8A di/dt ≤ 700A/µs VR ≤ 1200V TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5849 Rev A 6-2004 0.5 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor APT1201R6BVFR_SVFR 10 VGS=5.5V, 6V, 7V, 10V &15V 8 6 4.5V 4 2 4V ID, DRAIN CURRENT (AMPERES) 8 6 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @