APT1201R4SFLLG

APT1201R4BFLL APT1201R4SFLL 1200V POWER MOS 7 R 9A 1.400Ω FREDFET D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT1201R4BFLL_SFLL UNIT 1200 Volts Drain-Source Voltage 9 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.40 W/°C PD TJ,TSTG 1 36 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 °C 300 Amps 9 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 4.5A) TYP MAX UNIT Volts 1.40 Ohms Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 3-2004 Characteristic / Test Conditions 050-7392 Rev A Symbol APT1201R4BFLL_SFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX 2030 2500 Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V 309 472 Crss Reverse Transfer Capacitance f = 1 MHz 60 90 VGS = 10V 76 120 Qg Total Gate Charge Qgs Gate-Source Charge 3 VDD = 600V 10 12 ID = 9A @ 25°C 51 80 8 16 Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time VGS = 15V Rise Time VDD = 600V 5 10 ID = 9A @ 25°C 27 41 RG = 1.6Ω 11 25 TYP MAX tr td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS 9 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Characteristic / Test Conditions Peak Diode Recovery dt dv/ UNIT Amps (Body Diode) 36 (VGS = 0V, IS = -ID 9A) 1.3 Volts 18 V/ns dt 5 t rr Reverse Recovery Time (IS = -ID 9A, di/dt = 100A/µs) Tj = 25°C 210 Tj = 125°C 710 Q rr Reverse Recovery Charge (IS = -ID 9A, di/dt = 100A/µs) Tj = 25°C .07 Tj = 125°C 2.0 IRRM Peak Recovery Current (IS = -ID 9A, di/dt = 100A/µs) Tj = 25°C 10 Tj = 125°C 15 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.42 RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 D=0.5 0.05 0.1 0.05 Note: 0.02 0.01 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7392 Rev A 3-2004 0.45 0.2 0.01 0.005 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 29.9mH, RG = 25Ω, Peak IL = 9A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID9A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10 Typical Performance Curves APT1201R4BFLL_SFLL 20 VGS =15,10 & 8V Graph Deleted ID, DRAIN CURRENT (AMPERES) 18 16 7V 14 12 6.5V 10 08 6V 06 04 5.5V 02 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @