APT25GN120SG/TR

TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S(G) APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G C E E • 1200V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Integrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT25GN120B(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 67 I C2 Continuous Collector Current @ TC = 110°C 33 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 75 Switching Safe Operating Area @ TJ = 150°C 75A @ 1200V Total Power Dissipation 272 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150µA) VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 1mA, Tj = 25°C) I GES RG(int) 5 5.8 6.5 1.4 1.7 2.1 Units Volts Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) MAX 1200 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) I CES TYP 1.9 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 100 2 Gate-Emitter Leakage Current (VGE = ±20V) 600 8 Integrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD nA Ω 9-2009 V(BR)CES MIN Rev E Characteristic / Test Conditions 050-7600 Symbol APT25GN120B_S(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA Total Gate Charge 3 Gate-Emitter Charge TYP Capacitance 1800 VGE = 0V, VCE = 25V 105 f = 1 MHz 85 Gate Charge 9.5 VGE = 15V 155 VCE = 600V 10 I C = 25A 85 Gate-Collector ("Miller ") Charge TJ = 150°C, R G = 4.3Ω 7, VGE = Switching Safe Operating Area MIN 15V, L = 100µH,VCE = 1200V Inductive Switching (25°C) 22 tr Current Rise Time VCC = 800V 17 td(off) Turn-off Delay Time VGE = 15V 280 I C = 25A 135 RG = 1.0Ω 7 TBD Eon1 Eon2 Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) TJ = +25°C 5 Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125°C) 22 tr Current Rise Time VCC = 800V 17 Turn-off Delay Time VGE = 15V 335 I C = 25A RG = 1.0Ω 7 225 TBD TJ = +125°C 2390 tf 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy ns mJ 2150 Current Fall Time Eon1 nC 1490 6 Eoff td(off) V A Turn-on Delay Time Current Fall Time UNIT pF 75 td(on) tf MAX 55 66 ns mJ 3075 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .46 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 050-7600 Rev E 9-2009 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 80 80 70 IC, COLLECTOR CURRENT (A) 12V 60 11V 50 40 10V 30 9V 20 8V 10 9V 20 0 8V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) 16 250µs PULSE TEST