APT2X100DQ100J

2 1 3 4 2 1 Anti-Paralle l APT2x100DQ100J 3 4 2 3 1 4 SO P aralle l APT2x101DQ100J 2 T- 27 "UL Recognized" file # E145592 IS OT OP ® APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode Density All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions APT2x101_100DQ100J UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 64°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 133 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 1000 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 100A 2.1 2.7 IF = 150A 2.34 IF = 100A, TJ = 125°C 1.64 Volts VR = 1000V 100 VR = 1000V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 120 UNIT μA pF 053-4231 Rev D 3-2011 Symbol DYNAMIC CHARACTERISTICS Symbol APT2x101_100DQ100J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM trr Qrr IRRM trr Qrr IRRM MIN TYP - 45 - 290 - 685 - 6 - 340 ns - 3645 nC - 18 - 160 ns - 7085 nC - 70 Amps MIN TYP IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C IF = 100A, diF/dt = -200A/μs VR = 667V, TC = 25°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 100A, diF/dt = -200A/μs Reverse Recovery Charge VR = 667V, TC = 125°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 100A, diF/dt = -1000A/μs Reverse Recovery Charge VR = 667V, TC = 125°C Maximum Reverse Recovery Current MAX UNIT ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions R θJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) oz 29.2 g 0.9 0.7 0.30 Note: 0.20 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.45 0.5 0.3 0.15 t1 t2 0.10 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4231 Rev D 3-2011 °C/W 1.03 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 .41 Volts Maximum Mounting Torque 0.35 UNIT 2500 Package Weight 0.40 MAX 10 lb•in 1.1 N•m TYPICAL PERFORMANCE CURVES APT2x101_100DQ100J 400 250 200 TJ = 175°C 150 TJ = 125°C 100 TJ = 25°C 50 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 300 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 9000 T = 125°C J V = 667V 8000 R 7000 150A 100A 6000 5000 4000 50A 3000 2000 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 50A 200 150 100 80 T = 125°C J V = 667V 70 R 60 50 100A 40 50A 30 20 10 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 Qrr 1.2 trr 0.8 0.6 IRRM J 120 100 80 60 0.4 Qrr 0.2 Duty cycle = 0.5 T = 175°C 140 trr 1.0 150A 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 100A 250 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1.4 0.0 150A 300 0 IRRM, REVERSE RECOVERY CURRENT (A) 0 R 50 TJ = -55°C 0 350 T = 125°C J V = 667V 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 700 600 500 400 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4231 Rev D 3-2011 CJ, JUNCTION CAPACITANCE (pF) 800 APT2x101_100DQ100J Vr diF /dt Adjus t +18V APT75GP1200 0V D.U.T. 30μH trr/Q rr Wavefor m PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circui 1 I F - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 I RRM - Maximum Reverse Recovery Current 4 e diode trr - Revers e R ecovery Time, measured from zero crossing wher current goes from positive to negative, to the point at which the straight line through I RRM and 0.25 I RRM passes through zero . 5 Q rr - Area Under the Curve Defined by I t 1 4 Zer o . 5 RRM 0.25 I RRM 3 2 and trr. Figure 10, Diode Reverse Recovery Waveform and Definition s SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 053-4231 Rev D 3-2011 30.1 (1.185) 30.3 (1.193) Anode 2 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Anti-paralle l P aralle l APT2x100DQ100J APT2x101DQ100J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2