APT2X100DQ60J

2 1 3 4 2 1 Anti-Parallel APT2x100DQ60J 3 4 2 1 3 4 SO Parallel APT2x101DQ60J 2 T- 27 APT2x101DQ60J APT2x100DQ60J 600V 100A 600V 100A "UL Recognized" ISOTOP ® file # E145592 DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2x101_100DQ60J UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 146 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 1000 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 100A 1.6 2.2 IF = 200A 2.05 IF = 100A, TJ = 125°C 1.28 VR = 600V Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor Volts 25 VR = 600V, TJ = 125°C 500 190 UNIT µA pF 7-2006 VF Characteristic / Test Conditions 053-4208 Rev E Symbol DYNAMIC CHARACTERISTICS Symbol APT2x101_100DQ60J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge VR = 400V, TC = 25°C IF = 100A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 100A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 400V, TC = 125°C MIN TYP MAX UNIT - 34 - 160 - 290 - 5 - 220 ns - 1530 nC - 13 - 100 ns - 2890 nC - 44 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT .33 °C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.3 0.10 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 SINGLE PULSE 0.05 10 -5 10 10 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -4 -3 7-2006 TJ (°C) 053-4208 Rev E t1 t2 0.05 0 PDM 0.15 TC (°C) 0.0673 0.188 0.0743 Dissipated Power (Watts) 0.0182 0.361 5.17 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL Downloaded from Elcodis.com electronic components distributor TYPICAL PERFORMANCE CURVES 300 trr, REVERSE RECOVERY TIME (ns) TJ = 25°C 250 IF, FORWARD CURRENT (A) 300 200 TJ = 175°C 150 TJ = 125°C 100 50 APT2x101_100DQ60J T =125°C J V =400V R 250 200A 200 100A 50A 150 100 50 TJ = -55°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 60 T =125°C J V =400V 3500 R 200A 3000 100A 2500 2000 50A 1500 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 0.8 50A 20 10 Duty cycle = 0.5 T =175°C J 140 120 Qrr 100 80 60 40 0.2 0.0 100A 30 160 IRRM 0.6 0.4 200A 40 180 trr trr 50 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change Qrr 1.0 T =125°C J V =400V 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 4000 20 0 25 50 75 100 125150 25 50 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 1200 1000 800 7-2006 600 400 200 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage Downloaded from Elcodis.com electronic components distributor 053-4208 Rev E CJ, JUNCTION CAPACITANCE (pF) 1400 APT2x101_100DQ60J Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 053-4208 Rev E 7-2006 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2x100DQ60J Anode 2 APT2x101DQ60J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. Downloaded from Elcodis.com electronic components distributor