APT2X101DQ100J

2 1 3 4 2 1 Anti-Parallel APT2x100DQ100J 3 4 2 3 1 4 SO Parallel APT2x101DQ100J 2 T- 27 APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A "UL Recognized" ISOTOP ® file # E145592 DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2x101_100DQ100J UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 94°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 133 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 1000 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 100A 2.1 2.7 IF = 150A 2.34 IF = 100A, TJ = 125°C 1.64 100 VR = 1000V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor Volts VR = 1000V 120 UNIT µA pF 7-2006 VF Characteristic / Test Conditions 053-4231 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT2x101_100DQ100J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/µs VR = 667V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 667V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/µs IF = 100A, diF/dt = -1000A/µs VR = 667V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 45 - 290 - 685 - 6 - 340 ns - 3645 nC - 18 - 160 ns - 7085 nC - 70 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT .32 °C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.3 0.10 t 0.05 10 -5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -4 7-2006 TJ (°C) 053-4231 Rev B t1 t2 0.1 0.05 0 PDM 0.15 TC (°C) 0.0308 0.0693 0.219 Dissipated Power (Watts) 0.00101 0.0299 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 0.390 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL Downloaded from Elcodis.com electronic components distributor ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. TYPICAL PERFORMANCE CURVES 250 200 TJ = 175°C 150 TJ = 125°C 100 TJ = 25°C 50 0 0 9000 T = 125°C J V = 667V 8000 R 7000 150A 100A 6000 5000 4000 50A 3000 2000 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 150A 300 100A 250 50A 200 150 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 80 T = 125°C J V = 667V 70 R 60 50 100A 40 50A 30 20 10 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 Qrr 1.2 trr 0.8 0.6 IRRM J 120 100 80 60 0.4 Qrr 0.2 Duty cycle = 0.5 T = 175°C 140 trr 1.0 150A 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) R 0 1.4 0.0 350 APT2x101_100DQ100J T = 125°C J V = 667V 50 TJ = -55°C 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) trr, REVERSE RECOVERY TIME (ns) 400 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 300 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 40 20 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 700 600 500 400 7-2006 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage Downloaded from Elcodis.com electronic components distributor 053-4231 Rev B CJ, JUNCTION CAPACITANCE (pF) 800 APT2x101_100DQ100J Vr diF /dt Adjust +18V APT75GP1200 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 053-4231 Rev B 7-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel APT2x100DQ100J Anode 2 Parallel APT2x101DQ100J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. Downloaded from Elcodis.com electronic components distributor