APT33GF120B2RDQ2G

TYPICAL PERFORMANCE CURVES ® 1200V APT33GF120B2_LRDQ2(G) APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • RBSOA and SCSOA Rated • Ultra Low Leakage Current (L) C • Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT33GF120B2_LRDQ2(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 64 I C2 Continuous Collector Current @ TC = 100°C 30 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 75 Switching Safe Operating Area @ TJ = 150°C 75A @ 1200V Total Power Dissipation Watts 357 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 4.5 5.5 6.5 2.0 2.5 3.0 Units 1200 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP xx 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 100 2 Gate-Emitter Leakage Current (VGE = ±20V) 6000 ±120 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA nA 11-2005 V(BR)CES MIN Rev A Characteristic / Test Conditions 052-6280 Symbol DYNAMIC CHARACTERISTICS Symbol APT33GF120B2_LRDQ2(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf 110 Gate Charge 10 VGE = 15V 170 TJ = 150°C, R G = 4.3Ω, VGE = 1315 TJ = +25°C 1515 14 VCC = 800V 17 Turn-off Delay Time VGE = 15V 220 RG = 4.3Ω 135 1325 I C = 25A Current Fall Time Eoff Turn-off Switching Energy µJ 1930 Inductive Switching (125°C) Current Rise Time Turn-on Switching Energy (Diode) ns 110 RG = 4.3Ω Turn-on Delay Time Turn-on Switching Energy nC 185 6 Eon2 V A 17 I C = 25A Eon1 pF 75 14 5 UNIT 100 VCC = 800V 4 MAX 19 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) f = 1 MHz 15V, L = 100µH,VCE = 1200V Turn-off Delay Time Eoff tr 230 VGE = 15V Turn-on Switching Energy (Diode) td(on) 1855 VGE = 0V, VCE = 25V I C = 25A Current Rise Time Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN 44 55 TJ = +125°C ns µJ 3325 6 2145 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX .35 0.61 6.10 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6280 Rev A 11-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TJ = 25°C 60 TJ = -55°C 50 40 TJ = 125°C 30 20 10 70 12V 60 50 11V 40 10V 30 20 9V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST