APT35GA90BD15

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT (B) TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short G C delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the E poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode) ® FEATURES D 3 PA K (S) C E TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 900 V IC1 Continuous Collector Current @ TC = 25°C 63 IC2 Continuous Collector Current @ TC = 100°C 35 ICM Pulsed Collector Current 1 105 VGE Gate-Emitter Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 290 W Vces Parameter 2 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL Symbol 105A @ 900V -55 to 150 Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics A °C 300 TJ = 25°C unless otherwise specified Parameter Test Conditions Min VBR(CES) Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1.0mA 900 VCE(on) Collector-Emitter On Voltage VGE(th) Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 3.1 VGE = 15V, TJ = 25°C 2.5 IC = 18A TJ = 125°C 2.2 VGE =VCE , IC = 1mA ICES Typ 3 4.5 TJ = 25°C 350 VGE = 0V TJ = 125°C 1500 Microsemi Website - http://www.microsemi.com V 6 VCE = 900V, VGS = ±30V Unit ±100 μA nA 052-6344 Rev E 5 - 2011 Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg3 Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT35GA90BD_SD15 TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, VCE = 25V 173 f = 1MHz 28 Gate Charge 84 VGE = 15V 14 IC = 18A Inductive Switching (25°C) 12 VCC = 600V 15 Turn-Off Delay Time VGE = 15V 104 IC = 18A 86 Turn-On Switching Energy RG = 10Ω4 642 Eoff6 Turn-Off Switching Energy TJ = +25°C 382 td(on) Turn-On Delay Time Inductive Switching (125°C) 11 tr Current Rise Time VCC = 600V 14 Turn-Off Delay Time VGE = 15V 154 IC = 18A 144 Eon2 Turn-On Switching Energy RG = 10Ω4 1044 Eoff6 Turn-Off Switching Energy TJ = +125°C 907 tf Current Fall Time nC A Eon2 td(off) Unit pF 105 L= 100uH, VCE = 900V Current Rise Time Current Fall Time Max 34 TJ = 150°C, RG = 10Ω4, VGE = 15V, Turn-On Delay Time Typ 1934 VCE= 450V Gate- Collector Charge Switching Safe Operating Area Min Capacitance ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic RθJC Junction to Case Thermal Resistance (IGBT) RθJC Junction to Case Thermal Resistance (Diode) WT Torque Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Min Typ Max - - .43 1.18 - 5.9 Unit °C/W - g 10 in·lbf 052-6344 Rev E 5 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 60 V = 15V 15V 13V TJ= 125°C 50 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) GE APT35GA90BD_SD15 250 TJ= 55°C 40 TJ= 25°C TJ= 150°C 30 20 10 200 11V 150 10V 100 9V 8V 50 7V 6V 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) 60 40 TJ= -55°C TJ= 25°C TJ= 125°C 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4 IC = 36A 3 TJ = 25°C. 250μs PULSE TEST