APT35GA90B

APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT35GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. APT35GA90S ® D 3 PAK Single die IGBT FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 900 V IC1 Continuous Collector Current @ TC = 25°C 63 IC2 Continuous Collector Current @ TC = 100°C 35 ICM Pulsed Collector Current 105 VGE Gate-Emitter Voltage PD Total Power Dissipation @ TC = 25°C Vces Parameter 1 2 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TJ Symbol VBR(CES) VGE(th) Gate Emitter Threshold Voltage °C 300 TJ = 25°C unless otherwise specified Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage V W -55 to 150 Parameter VCE(on) ±30 290 105A @ 900V Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics A Test Conditions Min VGE = 0V, IC = 1.0mA 900 Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 3.1 VGE = 15V, TJ = 25°C 2.5 IC = 18A TJ = 125°C 2.2 VGE =VCE , IC = 1mA ICES Typ 3 4.5 V 6 VCE = 900V, TJ = 25°C 250 VGE = 0V TJ = 125°C 1000 VGS = ±30V Unit μA ±100 nA Typ Max Unit Thermal and Mechanical Characteristics Symbol Characteristic Min RθJC Junction to Case Thermal Resistance - - 0.43 °C/W WT Package Weight - 5.9 - g 10 in·lbf Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 052-6332 Rev D 5 - 2011 Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg3 Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT35GA90B_S TJ = 25°C unless otherwise specified Test Conditions Min Typ Capacitance 1934 VGE = 0V, VCE = 25V 173 f = 1MHz 28 Gate Charge 84 VGE = 15V 14 VCE= 450V L= 100uH, VCE = 900V Inductive Switching (25°C) 105 VCC = 600V 15 Turn-Off Delay Time VGE = 15V 104 IC = 18A 86 Turn-On Switching Energy RG = 10Ω4 642 Eoff6 Turn-Off Switching Energy TJ = +25°C 382 td(on Turn-On Delay Time Inductive Switching (125°C) 11 tr Current Rise Time VCC = 600V 14 Turn-Off Delay Time VGE = 15V 154 IC = 18A 144 Eon2 Turn-On Switching Energy RG = 10Ω4 1044 Eoff6 Turn-Off Switching Energy TJ = +125°C 907 tf Current Fall Time nC 12 Eon2 td(off) pF A Current Rise Time Current Fall Time Unit 34 IC = 18A TJ = 150°C, RG = 10Ω4, VGE = 15V, Max ns μJ ns μJ 052-6332 Rev D 5 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 60 V = 15V 15V 13V TJ= 125°C 50 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) GE APT35GA90B_S 250 TJ= 55°C 40 TJ= 25°C TJ= 150°C 30 20 10 200 11V 150 10V 100 9V 8V 50 7V 6V 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 80 60 40 TJ= -55°C 20 TJ= 25°C TJ= 125°C 0 0 2 4 6 8 10 12 IC = 36A 3 TJ = 25°C. 250μs PULSE TEST