APT43GA90BD30

APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT (B) TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. ® FEATURES -2 D 3 PA K 47 (S) C G G C E E Combi (IGBT and Diode) TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Symbol Vces Parameter Collector Emitter Voltage Ratings Unit 900 V IC1 Continuous Collector Current @ TC = 25°C 78 IC2 Continuous Collector Current @ TC = 100°C 43 ICM Pulsed Collector Current 1 129 VGE Gate-Emitter Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 337 W 2 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL Symbol 129A @ 900V -55 to 150 Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics A °C 300 TJ = 25°C unless otherwise specified Parameter Test Conditions Min VBR(CES) Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1.0mA 900 VCE(on) Collector-Emitter On Voltage VGE(th) Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 3.1 VGE = 15V, TJ = 25°C 2.5 IC = 25A TJ = 125°C 2.2 VGE =VCE , IC = 1mA ICES Typ 3 4.5 V 6 VCE = 900V, TJ = 25°C 350 VGE = 0V TJ = 125°C 1500 VGS = ±30V Unit μA ±100 nA Max Unit °C/W Symbol Characteristic Min Typ RθJC Junction to Case Thermal Resistance (IGBT) - - 0.37 RθJC Junction to Case Thermal Resistance (Diode) - - 0.80 WT Package Weight - 5.9 - g 10 in·lbf Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 052-6345 Rev D 7 - 2011 Thermal and Mechanical Characteristics Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg2 Total Gate Charge Qge Gate-Emitter Charge Qgc Gate- Collector Charge SSOA td(on) tr td(off) tf Switching Safe Operating Area APT43GA90BD_SD30 TJ = 25°C unless otherwise specified Test Conditions Min Typ Capacitance 2465 VGE = 0V, VCE = 25V 227 f = 1MHz 34 Gate Charge 116 VGE = 15V 18 VCE= 450V 44 TJ = 150°C, RG = 4.7Ω, VGE = 15V, L= 100uH, VCE = 900V 129 12 VCC = 600V 16 Turn-Off Delay Time VGE = 15V 82 Turn-On Switching Energy RG = 4.7Ω 875 Eoff5 Turn-Off Switching Energy TJ = +25°C 425 td(on Turn-On Delay Time Inductive Switching (125°C) 12 tr 3 Current Rise Time VCC = 600V 16 Turn-Off Delay Time VGE = 15V 117 IC = 25A 129 Eon2 Turn-On Switching Energy RG = 4.7Ω3 1646 Eoff5 Turn-Off Switching Energy TJ = +125°C 800 tf Current Fall Time nC ns 57 IC = 25A Eon2 td(off) pF A Inductive Switching (25°C) Current Fall Time Unit IC = 25A Current Rise Time Turn-On Delay Time Max μJ ns μJ 052-6345 Rev D 7 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. See Mil-Std-750 Method 3471 3 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 4 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a silicon carbide Schottky diode. 5 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves APT43GA90BD_SD30 300 250 = 15V 15V TJ= 125°C TJ= 55°C 200 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) GE TJ= 25°C TJ= 150°C 150 100 50 11V 150 10V 100 0 100 TJ= 25°C 50 TJ= -55°C TJ= 125°C VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 150 TJ = 25°C. 250μs PULSE TEST