APT5018SLLG

APT5018BLL APT5018SLL 500V 27A 0.180Ω R POWER MOS 7 MOSFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT5018 UNIT 500 Volts 27 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 108 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 27 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts 27 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 13.5A) TYP MAX 0.18 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2003 BVDSS Characteristic / Test Conditions 050-7004 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT5018BLL - SLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 546 Reverse Transfer Capacitance f = 1 MHz 38 VGS = 10V 58 VDD = 250V 15 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 27A @ 25°C td(off) tf 4 VDD = 250V ID = 27A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 2 INDUCTIVE SWITCHING @ 25°C 216 VDD = 333V, VGS = 15V Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ID = 27A, RG = 5Ω 6 ns 18 RG = 1.6Ω Fall Time nC 9 VGS = 15V Turn-off Delay Time pF 31 RESISTIVE SWITCHING Rise Time UNIT 2596 VGS = 0V 3 MAX 134 INDUCTIVE SWITCHING @ 125°C µJ 337 VDD = 333V VGS = 15V ID = 27A, RG = 5Ω 162 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID27A, dl S/dt = 100A/µs) Q Reverse Recovery Charge (IS = -ID27A, dl S/dt = 100A/µs) Peak Diode Recovery dv/ 100 (Body Diode) 1.3 (VGS = 0V, IS = -ID27A) dt MAX 27 IS rr dv/ dt TYP UNIT Amps Volts 544 ns 8 µC 5 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol MIN Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 TYP 0.42 4 Starting Tj = +25°C, L = 3.32mH, RG = 25Ω, Peak IL = 27A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID27A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.35 0.7 0.30 0.25 0.5 0.20 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7004 Rev D 7-2003 0.45 0.40 0.15 t1 0.3 t2 0.10 0.1 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 °C/W 40 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5018BLL - SLL RC MODEL Junction temp. ( ”C) 0.161 0.00994F Power (Watts) 0.259 0.236F Case temperature ID, DRAIN CURRENT (AMPERES) 80 VGS=15 &10V 8V 60 7.5V 7V 40 6.5V 20 6V 5.5V VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @