APT50GN120B2G

APT50GN120B2(G) 1200V TYPICAL PERFORMANCE CURVES APT50GN120B2 APT50GN120B2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. T-MaxTM G C E • 1200V NPT Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GN120B2(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 8 @ TC = 25°C UNIT Volts 134 66 Amps 150 @ TC = 150°C 150A @ 1200V Switching Safe Operating Area @ TJ = 150°C 543 Total Power Dissipation Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 400µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) RGINT Intergrated Gate Resistor 5.8 6.5 1.4 1.7 2.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 5 Units Volts 1.9 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) I GES MAX 1200 (VCE = VGE, I C = 2mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 100 2 600 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD nA Ω 10-2005 V(BR)CES MIN Rev C Characteristic / Test Conditions 050-7602 Symbol APT50GN120B2(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 3600 VGE = 0V, VCE = 25V 210 f = 1 MHz 170 Gate Charge 9.5 VGE = 15V 315 Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge I C = 50A SSOA Switching Safe Operating Area TJ = 150°C, R G = 2.2Ω 7, VGE = VCE = 600V 15V, L = 100µH,VCE = 1200V Short Circuit Safe Operating Area VCC = 960V, VGE = 15V, TJ = 125°C, R G = 2.2Ω 7 td(on) tr td(off) tf Eon1 Eon2 Turn-on Delay Time Turn-off Switching Energy td(on) Turn-on Delay Time tr td(off) tf TBD TJ = +25°C Inductive Switching (125°C) 28 VCC = 800V 27 VGE = 15V 395 RG = 2.2Ω 7 205 TBD I C = 50A Current Fall Time 44 Turn-on Switching Energy Turn-on Switching Energy (Diode) µJ 3900 4495 Turn-off Delay Time Turn-off Switching Energy 115 RG = 2.2Ω 7 Current Rise Time Eon2 ns 320 6 Eon1 Eoff µs I C = 50A Turn-on Switching Energy (Diode) Eoff nC 10 27 5 V A VGE = 15V 4 pF 150 VCC = 800V Current Fall Time UNIT 190 28 Turn-off Delay Time MAX 20 Inductive Switching (25°C) Current Rise Time Turn-on Switching Energy TYP Capacitance Qg SCSOA MIN 55 TJ = +125°C ns 5660 66 µJ 6795 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .23 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 10-2005 8 Continuous current limited by package lead temperature. 050-7602 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. Rev C 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 15V 15V 140 80 10V 60 9V 40 8V 20 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 IC, COLLECTOR CURRENT (A) 120 TJ = 125°C 100 TJ = 25°C 80 TJ = -55°C 60 40 20 0 0 10V 60 9V 40 8V 20 7V 0 2 4 6 8 10 12 14 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST