APT50GP60B2DQ2G

APT50GP60B2DQ2(G) 600V TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2 APT50GP60B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • SSOA Rated • Low Gate Charge C • Ultrafast Tail Current shutoff G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GP60B2DQ2(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 7 @ TC = 25°C UNIT Volts 150 72 1 Amps 190 Switching Safe Operating Area @ TJ = 150°C 190A @ 600V Total Power Dissipation Watts 625 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 525µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) 2.1 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 525 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 11-2005 MIN Rev A Characteristic / Test Conditions 050-7495 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GP60B2DQ2(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 30 Gate Charge 7.5 VGE = 15V 165 15V, L = 100µH,VCE = 600V 465 635 Inductive Switching (125°C) 19 VCC = 400V 36 VGE = 15V 115 RG = 4.3Ω 85 465 I C = 50A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 835 6 Current Fall Time ns 60 TJ = +25°C Turn-off Delay Time nC 85 I C = 50A Current Rise Time V A 36 RG = 4.3Ω Turn-on Delay Time pF 190 19 5 UNIT 50 VCC = 400V 4 MAX 40 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 465 TJ = 150°C, R G = 4.3Ω, VGE = Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 5700 I C = 50A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 1260 6 1060 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .20 RθJC Junction to Case (DIODE) .67 WT Package Weight 6.10 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7495 Rev A 11-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 70 70 60 60 IC, COLLECTOR CURRENT (A) TJ = -55°C 30 TJ = 25°C 20 TJ = 125°C 10 0 70 60 50 TJ = -55°C 40 TJ = 25°C 30 TJ = 125°C 20 10 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 100A 3.0 2.5 TJ = 25°C. 250µs PULSE TEST