APT40GP60B2DQ2G

APT40GP60B2DQ2(G) 600V TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2 APT40GP60B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 41A • Low Gate Charge • 200 kHz operation @ 400V, 26A • Ultrafast Tail Current shutoff • SSOA Rated G C E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT40GP60B2DQ2(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 7 @ TC = 25°C UNIT Volts 100 62 @ TC = 150°C Amps 160 160A @ 600V Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Watts 543 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) 2.1 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 500 2 Gate-Emitter Leakage Current (VGE = ±20V) Downloaded from Elcodis.com electronic components distributor Volts µA 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 5-2005 MIN Rev A Characteristic / Test Conditions 050-7493 Symbol DYNAMIC CHARACTERISTICS Symbol APT40GP60B2DQ2(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 25 Gate Charge 7.5 VGE = 15V 135 TJ = 150°C, R G = 5Ω, VGE = 385 350 Inductive Switching (125°C) 29 VGE = 15V 90 RG = 5Ω 70 385 I C = 40A Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 450 20 VCC =400V Eon1 µJ 645 6 Current Fall Time ns 45 TJ = +25°C Turn-off Delay Time nC 64 RG = 5Ω Current Rise Time V A 29 I C = 40A Turn-on Delay Time pF 160 20 5 UNIT 40 VCC = 400V 4 MAX 30 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 395 15V, L = 100µH,VCE = 600V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 4610 I C = 40A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 970 6 615 950 TYP MAX THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .23 RθJC Junction to Case (DIODE) .67 WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Repetitive Rating: Pulse width limited by maximum junction temperature. 7 Continuous current limited by package lead temperature/ APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7493 Rev A 5-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) Downloaded from Elcodis.com electronic components distributor 80 80 70 70 IC, COLLECTOR CURRENT (A) 40 TJ = -55°C 30 TJ = 25°C 20 TJ = 125°C 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) TJ = 25°C TJ = 125°C 50 0 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 3.5 TJ = 25°C. 250µs PULSE TEST