APT50M85JVFR

APT50M85JVFR Ω 50A 0.085Ω 500V POWER MOS V ® FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular SOT-227 Package ISOTOP ® D FREDFET G • Faster Switching Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol VDSS ID S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M85JVFR UNIT 500 Volts Drain-Source Voltage 50 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 500 Watts 4 W/°C VGSM PD TJ,TSTG 200 Linear Derating Factor Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 °C 300 30 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts 50 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.085 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 500 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 2000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor 050-5621 Rev A 6 - 2006 Symbol APT50M85JVFR DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 9000 10800 Coss Output Capacitance VDS = 25V 1240 1740 Crss Reverse Transfer Capacitance f = 1 MHz 500 750 Qg Total Gate Charge VGS = 10V 390 535 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller ") Charge ID = ID [Cont.] @ 25°C 42 170 65 255 VGS = 15V 15 30 t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 17 34 ID = ID [Cont.] @ 25°C 52 80 RG = 0.6Ω 7 14 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN 50 Continuous Source Current (Body Diode) Peak Diode Recovery dt 200 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) dv/ 5 dt UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 2.5 Tj = 125°C 8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 28 ns µC Amps THERMAL / PACKAGE CHARACTERISTICS Characteristic Symbol MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.25 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 2500 13 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5621 Rev A 6 - 2006 0.3 0.005 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor lb•in 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 2.89mH, R = 25Ω, Peak I = 30A j G L 5 I - -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0Ω, dt VR = 200V 0.02 °C/W Volts Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.01 UNIT APT50M85JVFR 150 VGS=7V, 10V & 15V 120 6V 90 5.5V 60 5V 30 4.5V ID, DRAIN CURRENT (AMPERES) TJ = +25°C 120 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @