APT54GA60BD30

APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT54GA60B when switching at high frequency. Single die IGBT ® FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 600 V IC1 Continuous Collector Current @ TC = 25°C 96 IC2 Continuous Collector Current @ TC = 100°C 54 161 Vces Parameter A ICM Pulsed Collector Current VGE Gate-Emitter Voltage 2 ±30 V PD Total Power Dissipation @ TC = 25°C 416 W 1 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL -55 to 150 Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics Symbol 161A @ 600V °C 300 TJ = 25°C unless otherwise specified Parameter Test Conditions Min VBR(CES) Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1.0mA 600 VCE(on) Collector-Emitter On Voltage VGE(th) Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 2.5 VGE = 15V, TJ = 25°C 2.0 IC = 32A TJ = 125°C 1.9 VGE =VCE , IC = 1mA ICES Typ 3 4.5 V 6 VCE = 600V, TJ = 25°C 250 VGE = 0V TJ = 125°C 2500 VGS = ±30V Unit μA ±100 nA Typ Max Unit Thermal and Mechanical Characteristics Symbol Characteristic Min RθJC Junction to Case Thermal Resistance - - .3 °C/W WT Package Weight - 5.9 - g 10 in·lbf Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 052-6328 Rev E 6 - 2011 Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg3 Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT54GA60B_S TJ = 25°C unless otherwise specified Test Conditions Min Typ Capacitance 4130 VGE = 0V, VCE = 25V 350 f = 1MHz 45 Gate Charge 158 VGE = 15V 26 VCE= 300V L= 100uH, VCE = 600V Inductive Switching (25°C) 161 VCC = 400V 20 Turn-Off Delay Time VGE = 15V 112 IC = 32A 86 Turn-On Switching Energy RG = 4.7Ω4 534 Eoff6 Turn-Off Switching Energy TJ = +25°C 466 td(on Turn-On Delay Time Inductive Switching (125°C) 16 tr Current Rise Time VCC = 400V 21 Turn-Off Delay Time VGE = 15V 146 IC = 32A 145 Eon2 Turn-On Switching Energy RG = 4.7Ω4 891 Eoff6 Turn-Off Switching Energy TJ = +125°C 838 tf Current Fall Time nC 17 Eon2 td(off) pF A Current Rise Time Current Fall Time Unit 52 IC = 32A TJ = 150°C, RG = 4.7Ω4, VGE = 15V, Max ns μJ ns μJ 052-6328 Rev E 6 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves APT54GA60B_S 100 = 15V TJ= 25°C TJ= 55°C 75 TJ= 125°C TJ= 150°C 50 25 0 8V 150 7V 100 6V 50 2 4 6 0 8 150 100 50 TJ= 25°C TJ= -55°C TJ= 125°C 0 0 2 4 6 8 10 12 IC = 64A IC = 32A 2 IC = 16A 1 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage VCE = 300V 8 4 2 0 0 20 40 60 80 100 120 140 GATE CHARGE (nC) FIGURE 4, Gate charge 160 4 3 IC = 64A IC = 32A 2 IC = 16A 1 VGE = 15V. 250μs PULSE TEST